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Insulated Gate Bipolar Transistor

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Total 30198 products for insulated gate bipolar transistor Manufacture & Suppliers

RA03M8087M-101 Mosfet Power Transistor For Portable Radio H46S Package

... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dra...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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FDMS6681Z 30V P Channel Mosfet Transistor 21.1A 49A 8PQFN

...Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts have been spec...

Shenzhen Res Electronics Limited
Guangdong,China

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TK13A60D TOSHIBA Field Effect Transistor

...,Q,M) TOSHIBA Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFET...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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HMC849ALP4CETR RF Power Transistors High Power Low Noise Performance

...Transistor High Power Low Noise Performance HMC849ALP4CETRR RF Power Transistors Product Features: -Operating Frequency: up to 4.5GHz -Gain: 11-14dB -Single-ended Output Power: +30dBm -Package Type: Surface ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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AD9361BBCZ High Power Rf Transistor

AD9361BBCZ RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide ga...

Shenzhen Sai Collie Technology Co., Ltd.
China

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H2M 2 Stage Amp Transistor Replacement RA60H4452M1-101 For Mobile Radio

... in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dr...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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RA03M8087M-101 Mosfet Power Transistor For Portable Radio H46S Package

... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dra...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

Site Member

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RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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IRF1407PBF N-Channel 75 V 130A (Tc) 330W (Tc) Through Hole TO-220AB RF Transistors

...Transistors Manufacturer: Infineon Product Category: MOSFETs RoHS: - REACH - SVHC: - Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 ...

Wisdtech Technology Co.,Limited
Guangdong,China

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Bipolar Discrete Semiconductor Devices TIP122 TIP127 TIP142P NPN PNP Transistor

... Complementary NPN - PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resu...

Guangzhou Topfast Technology Co., Ltd.
Guangdong,China

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SOT223 Bipolar Electronic Passive Components Transistor BCP56-16T1G TRANS NPN 80V 1A

... is housed in the SOT−223 package, which is designed for medium power surface mount applications. PRODUCT PROPERTIES Product Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1 A Voltage - Col...

STJK(HK) ELECTRONICS CO.,LIMITED
China

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DarliCM GROUPon Bipolar Mosfet Power Transistor TIP147 10A Current 100V Voltage

...Transistors TO-3P TIP147 10A 100V PNP DarliCM GROUPon Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with ...

ChongMing Group (HK) Int'l Co., Ltd
China

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TIP42C Bipolar NPN PNP Transistors 100V 6A Current 65W Power HFE Grouping

...Transistors Bipolar (BJT) Transistor PNP 100V 6A 65W Features ■ Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity Applications ■ General purpo...

ChongMing Group (HK) Int'l Co., Ltd
China

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750318208 Auxiliary Gate Drive Transformer For Active power factor correction

750318208 Auxiliary Gate Drive Transformer For Active power factor correction Characteristics: Interwinding capacitance down to <1 pF Tiny surface mount EP7 package Dielectric insulation up to 4 kV AC Basic insulation for 568 Vrms / 800 Vpk Operating ......

SHAREWAY TECHNOLOGY CO., LTD.
China

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Auxiliary Gate Drive Transformer For Uninterruptible power supplies 750319282

Auxiliary Gate Drive Transformer For Uninterruptible power supplies 750319282 Characteristics: Interwinding capacitance down to <1 pF Tiny surface mount EP7 package Dielectric insulation up to 4 kV AC Basic insulation for 568 Vrms / 800 Vpk Operating ......

SHAREWAY TECHNOLOGY CO., LTD.
China

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750318114 Tiny surface mount Auxiliary Gate Drive Transformer

750318114 Tiny surface mount Auxiliary Gate Drive Transformer Characteristics: Interwinding capacitance down to <1 pF Tiny surface mount EP7 package Dielectric insulation up to 4 kV AC Basic insulation for 568 Vrms / 800 Vpk Operating temperature: -40 °C ......

SHAREWAY TECHNOLOGY CO., LTD.
China

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750318616 AGDT Auxiliary Gate Drive Transformer For Industrial Drives

... insulation for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-......

SHAREWAY TECHNOLOGY CO., LTD.
China

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750319177 Auxiliary Gate Drive Transformer Tiny Surface Mount EP7 Package

750319177 surface mount EP7 Auxiliary Gate Drive Transformer Characteristics: Interwinding capacitance down to <1 pF Tiny surface mount EP7 package Dielectric insulation up to 4 kV AC Basic insulation for 568 Vrms / 800 Vpk Operating temperature: -40 °C ......

SHAREWAY TECHNOLOGY CO., LTD.
China

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750318131 SMD Gate Drive Transformer For AC Motor Inverters

750318131 SMD Gate Drive Transformer for AC motor inverters Characteristics: Interwinding capacitance down to <1 pF Tiny surface mount EP7 package Dielectric insulation up to 4 kV AC Basic insulation for 568 Vrms / 800 Vpk Operating temperature: -40 °C ......

SHAREWAY TECHNOLOGY CO., LTD.
China

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