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Insulated Gate Bipolar Transistor

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Total 30198 products for insulated gate bipolar transistor Manufacture & Suppliers

AO4407A P-CHANNEL 12A MOSFET Original in stock 10PCS Field Effect Transistor 4407A

AO4407A P-Channel Enhancement Mode Field Effect Transistor The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8

... performance Trench technology for extremely low RDS (ON) and fast switching 5. High power and current handling capability 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) 30...

Shenzhen Res Electronics Limited
Guangdong,China

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SI4463-C2A-GMR RF Power Transistor For High Efficiency And Reliability

...Transistors Product Description: The SI4463-C2A-GMR RF Power Transistors are designed for use in high-efficiency, high-power wireless applications. These transistors are capable of producing up to 125W of pe...

Shenzhen Sai Collie Technology Co., Ltd.
China

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TIP122 TIP127 TIP142P NPN PNP Transistor Bipolar Discrete Semiconductors

...transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transistors show ex...

Angel Technology Electronics Co
Hongkong,China

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PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors

...Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor Description: NPN high-voltage low VCEsa...

Angel Technology Electronics Co
Hongkong,China

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SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A

STW21NM60N N-CHANNEL 600V 0.19 �� - 17 A SECOND GENERATION MOSFET General Features �� 100% AVALANCHE TESTED �� LOW INPUT CAPACITANCE AND GATE CHARGE �� LOW GATE INPUT RESISTANCE DESCRIPTION The STx21NM60N is realiz...

Anterwell Technology Ltd.
Guangdong,China

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CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet

CJ2310 S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage ...

DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong,China

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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

QM4803D�� N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the s...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5m�� RDS(ON) (at VGS=4.5V) < 18m�� General Description �� Low RDS(ON) �� Logic Level Gate Drive �� Excellent Gate ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24m�� RDS(ON) (at VGS = 4.5V) < 30m�� RDS(ON) (at VGS = 2.5V) < 48m�� General Description The HXY4404 uses advance...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application

18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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High Current Load Mosfet Power Transistor With Low Gate Resistance

AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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BF981 N Channel 20mA 225mW Silicon Dual Gate Mosfet

Double gate N channel field effect Cross tube radio frequency audion package To-50 Silicon N - Channel Dual Gate Mos -Fet 20V 20mA 225mW Descriptions: Depletion type fieldeffect transistor in a plastic X-packag...

DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong,China

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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

QM4803D�� N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the s...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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High Current Load Mosfet Power Transistor With Low Gate Resistance

AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5m�� RDS(ON) (at VGS=4.5V) < 18m�� General Description �� Low RDS(ON) �� Logic Level Gate Drive �� Excellent Gate ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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