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...switching power mosfet low power mosfet This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic c...
...channel MOS-FET switching power mosfet > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated >...
...% avalanche tested. Zener-protected. Absolute Maximum Ratings : Switching applications. Tailored for very high frequency converters (f > 150 kHz). Description : This device is an N-channel Power MOSFET devel...
...% avalanche tested. Zener-protected. Absolute Maximum Ratings : Switching applications. Tailored for very high frequency converters (f > 150 kHz). Description : This device is an N-channel Power MOSFET devel...
Product Description: 1. High current carrying capacity with low on-resistance. 2. Low gate charge for fast switching. 3. Low input capacitance and gate resistance for high frequency operation. 4. RoHS Compliant...
SUD25N06-45L N-Channel 60-V (D-S), 175C MOSFET, Logic Level switching power mosfet low power mosfet Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Pulsed ......
2SB1316TL Power Transistor low power mosfet switching power mosfet] Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Comple...
...MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • Very Small SOIC Package • Low Profile (<1.1mm) • Available in Tape & Reel • Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching......
...MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugge...
Mosfet Power Transistor DMHT3006LFJ-13 V-DFN5045-12 Mosfet BVDSS: 25V-30V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making i...
STP110N8F6 Transistors MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. ...
...Mosfet Power Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...
... switching This device is specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transi...
... and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devic...
... and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devic...
Mosfet Power Transistor DMHT3006LFJ-13 V-DFN5045-12 Mosfet BVDSS: 25V-30V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making i...
STP110N8F6 Transistors MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. ...
...MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugge...
...Mosfet Power Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge...