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BTS5215L Chipscomponent Electronic Components IC Chips. BTS5215L MOSFET Chip Integrated Circuit New And Original HSOP12 Source SWITCH IC-Power distribution SMART HI SIDE PWR SWITCH INDUSTRY APP Category Integra...
Product Listing: SQ2309ES-T1_BE3 MOSFET Features: • Low on-resistance • High power dissipation • Low gate charge • Fast switching speed • Avalanche rated • RoHS Compliant Absolute Maximum Ratings • Drain Source...
SI2347DS-T1-BE3 MOSFET Power Electronics High Performance and Reliable Power Switching Solution Parameters: • Drain-Source Voltage (VDS): -55V • Gate-Source Voltage (VGS): -20V • Drain Current (ID): -......
IRLR2905ZTRPBF MOSFET Power Transistor High Performance Low On Resistance Fast Switching Features: • Logic Level Gate Drive, 4.5V to 20V • Low On-Resistance RDS(on) • 100% UIL Tested • RoHS Compliant • ......
.... 2. Low On-Resistance: The MOSFET's low on-resistance of 0.270 at 10V gate-sourcevoltage helps to reduce power losses and improve overall system efficiency.Fast Switching Speeds: The SIHF12N60E-E3 has a fas...
...MOSFET power transistor with a low on-resistance of 24A. 2. It has a breakdown voltage of 500V and a drain-source voltage of 400V. 3. It is a surface-mount device with a thermal resistance of 1.5°C/W for fas...
IRL3713PBF MOSFET High Efficiency Power Switch for Robust and Reliable Electronics Product Features: Low On-Resistance Low Input Capacitance Low Input/Output Leakage Logic Level Gate Drive RoHS Compli...
IRFB38N20DPBF MOSFET Power Electronics High-Performance Low-Voltage Low-Power Switching Device Product Parameters: •Voltage: 200V •Drain-Source On-Resistance: 0.027 Ohm •Continuous Drain Current: 20A •Power ......
IRFB3806PBF MOSFET Power Transistor High Voltage High Current Switching Device Parameters: • Drain-Source Voltage (Vdss): 100V • Current - Continuous Drain (Id) @ 25°C: 66A • Rds On (Max) @ ......
SPW20N60C3 MOSFET Power Electronics High-Performance Low Loss Switching for High Power Applications Package Type: TO-220 Maximum Drain Source Voltage (Vds): 600V Maximum Gate Source ......
IRG4PC50UPBF MOSFET Power Electronics High-Performance High-Power Switching for Robust Applications Parameters: Drain-Source Voltage: 500V Continuous Drain Current: 43A Drain-Source On-Resistance: 0.032 ...
IRFB4620PBF MOSFET Power Transistor High Performance Reliable Power Switching Features: 200V Drain-Source Voltage (VDS) 8.9A Continuous Drain Current (ID) at 25C 12.3A Continuous Drain Current (ID) at 10...
... designed for high-density applications. This device offers low on-state resistance, fast switching speed, and improved maximum ratings. It is suitable for applications such as switching regulators, converte...
...Operation • RoHS Compliant Product Applications: • Switching Circuits • Battery-Powered Circuits • High-Speed Logic Circuits • Automotive Applications Why buy from us >>> Fast / Safely / Conveniently • SKL i...
Description: The IRF3415PBF is a high-performance N-Channel MOSFET that provides superior switching performance in power management applications. Features: - Low on-resistance RDS(on) - Low gate charge Qg - Low...
Product Listing: IRF2807PBF N-Channel Power MOSFET Features: 100V drain-source voltage -55C to +150C operating temperature range 20A continuous drain current Fast switching speed Low gate charge L...
Product Listing: IRF200S234 N-Channel Power MOSFET Features: • Low gate charge • Low on-state resistance • Fast switching times • High power and current handling capabilities • Avalanche energy rated Specificat...
...MOSFET Power Electronics for Maximum Efficiency Features: • 100V Drain-Source Breakdown Voltage • -55V Gate-Source Voltage • 5.5A Continuous Drain Current • 190A Drain Source On-State Resistance • Fast Switc...
...MOSFET Power Electronics High Power and Low On-Resistance for Maximum Efficiency Product Description: This is an N-Channel enhancement mode silicon gate power field effect transistor with an integral source-...
Product Listing: IRF7329TRPBF MOSFET: Features: - P-Channel Enhancement Mode - Logic Level Gate - Fast Switching - Low Gate Charge - Improved Gate, Avalanche and Dynamic dV/dt - Rugged Technology - 175°C Operat...