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1.5uA Low Power Mosfet Transistor AS1360-33-T Positive Voltage Regulator AS1360 1.5µA Low-Power, Positive Voltage Regulator 1 General Description The AS1360 low-power, positive voltage regulator was designed to...
...: The IR2104PBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. This driver is designed to drive power MOSFETs and IGBTs in the high ...
Specifications 1 competitive price 2 warranty of each part 3 fast delicery 4 new and original...
...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better char...
...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced...
High Power MOSFET FAN3224TU_F085 Low-Side Gate Drivers, Dual 4-A High-Speed [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service ...
SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICATIONS Load Switch for Portable Devices DC/DC Converter Maxim...
...designed for gate control of N-channel, enhancement-mode, power MOSFETs used as high-side or low-side switches. The MIC5016/7 can sustain an on-state output indefinitely. The MIC5016/7 operates from a 2.75V ...
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
...Low Power LDO Features ● Low power consumption ● Low voltage drop ● Low temperature coefficient ● High input voltage (up to 24V) ● Related product model: HT7536-1,HT7550-1,HT7536-1,HT7533-1,HT7530-1... ● Hi...
... high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications wh...
... the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a w...
IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output ch...
...Low 0.0015andOmega; Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance...
FQA40N25 Chipscomponent Electronic Components IC Chips FQA40N25 High Power MOSFET electronic chip brand new original TO-3P MOSFET 250V N-Channel QFET Category Integrated Circuits (ICs) Mfr Analog Devices Inc. S...
...Power MOSFET Transistors TO-247-3 Product Description Of MSC750SMA170B MSC750SMA170B is Silicon Carbide N-Channel Power MOSFET, Low capacitances and low gate charge, package is TO-247-3. Specification Of MS...
... N-Channel Power MOSFETs designed for high-efficiency applications. They feature extremely low on-resistance (RDS(on)) and an excellent Qg x RDS(on) product (FOM), making them ideal for demanding power manag...
JY21L High and Low side driver General Description The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-cha...
... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silico...
... of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific on-state resistance (RDS(on)*A) Very low energy storage in output capacitance (Eoss) @400...