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... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized de...
...SiC) power module. Very low stray inductance, Outstanding performance at high frequency operation. Specification Of MSCSM120SKM11CT3AG Part Number MSCSM120SKM11CT3AG Product: Power MOSFET Modules Type: Buck ...
...Power MOSFET Module. Part NO: VMK165-007T Brand: IXYS Mounting Type: Screws Date Code: 01+ Quality Warranty: 3 Months Overview We specialize in high power and power conversion modules of famous brands Catego...
... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized de...
... delivery. Built with silicon-on-insulator (SOI) technology, it is ideal for applications such as motor control, digital power, switching power supplies, and solar cell inverters. It offers low gate charge, ...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220 mOhm @ 500mA, 10V Vgs(th) (Max) ...
FM50DY-10 Module Electronic Components IC MCU Microcontroller Integrated Circuits FM50DY-10 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px...
...Power MOSFET FDMA1032CZ 20V Complementary PowerTrench® MOSFET High Power MOSFET FDMA1032CZ 20V Complementary PowerTrench® MOSFET [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conduct...
...Power Supply Module Product Description: LC SX1308 booster module carrying SX1308 chip, its packagnig is small, and high efficiency. The output power can be adjust, maximum can arrive 28V and its interior in...
... based on the national military standard production line, this MOSFET is designed to meet the stringent requirements of military and industrial applications where performance and durability are paramount. As...
...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n...
...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better char...
IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Featur...
...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ...
...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a ne...
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
...Power Amplifier Module 10A Working Current 55dBm Gain Product Description: This Power Amplifier Module is a 100W Blocking Power Amplifier Module designed for High Power RF Jamming. It has a module size of 20...
...-63Hz OTHER SUPERIOR PRODUCTS Yasakawa Motor, Driver SG- Mitsubishi Motor HC-,HA- Westinghouse Modules 1C-,5X- Emerson VE-,KJ- Honeywell TC-,TK- GE Modules IC - ABB Module AB Module 1756-,1759- Tourch Screen...
...Power Amplifier Module SMA-F 28V 100g with signal source built-in, RF Jamming module Product Description: RF Power Amplifier Module is a high-performance RF power amplifier with built-in VCO, integrating a h...
IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output ch...