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...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better char...
...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a ne...
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output ch...
... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of...
...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ......
...Power MOSFET Product Description Optimizedfore-fuseandORingapplication Verylowon-resistanceRDS(on)@VGS=4.5V 100%avalanchetested Superiorthermalresistance N-channel QualifiedaccordingtoJEDEC1)fortargetapplica...
...Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized...
... Description The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independe...
... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silico...
... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconduc...
... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconduc...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14 mOhm @ 45A, 10V Vgs(th) (Max) @ I...
Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS C3 is Infineon's third series of CoolMOS Replacement for 600V CoolMOS C3 is CoolMOS P7 600V CoolMOS C3 is Infineon's third series of CoolMOS...
Power Supply For Mindray AC Adapter Power Adaptor Model Mango150M-19DD Company Introduction Guangzhou Yigu Medical Equipment Maintenance Co., Ltd. is a third party service provider of medical equipment maintena...
General Description: The product utilizes the advanced planar processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine t...
SPARK PLUG P3V3I SPARE PARTS FOR JENBACHER POWER GENERATION MODEL JGS-420 Product Description Type R10P3 Thread M18x1.5 Reach 28.5mm Hex 22.2mm Seat ......
Product:ACOPIAN 9EB85 Power Supply Model ACOPIAN 9EB85 New Original Guarantee Recommended Products: A03B - 0801 - C113 BECKHOFF EL2904 HAN 25D-BU-C ......
...Powerful Plaster Model Round Vibrator for Laboratory Features This machine is used for duplicating or pouring plaster and agar .It can remove bubbles in molds ,make the fillings homogeneous and dense . It is...
Electric Power Crane Model qtz80-6010 To Buildings Construction Site Description 1) We are a professional manufacture of construction machine, have CE certification, with high quality and competitive price 2) T...