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MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE Low Leakage High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 unless othe...
...10A, and low saturation voltage. With a low equivalent on-resistance (RCE(SAT) = 50m) and specified hFE up to 10A, it offers high gain hold-up. This device is AEC-Q101 ......
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...
Powered Audio Amplifier , Switch Mode Power Amplifier 2 x 600W For Line Array Speaker ABOUT HLA: Guangzhou Langyuan Audio Co., Ltd is specialized in producing professional audio equipment with an own brand “HLA...
Product Overview The LBSS4250Y3T1G and S-LBSS4250Y3T1G are NPN middle power transistors designed for middle power driver applications. They offer complementary PNP types, low VCE(sat), and are suitable for moto...
...Power Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V GS =-10V R DS(ON) = 6.8mΩ(typ.) @V GS =-4.5V Reliable and Rugged Halogen Free Devices Available ...
...Power Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V GS =-10V R DS(ON) = 6.8mΩ(typ.) @V GS =-4.5V Reliable and Rugged Halogen Free Devices Available ...
...Power Transistor IRF9530PBF -100V -14A 200 MOhms 1 P-Channel 38.7 NC Applications Increased ruggedness Wide availability from distribution partners Industry standard qualification High performance in low fre...
... Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. They feature low on-resistance with proprietary technology using a Cu connector. They have a narrowed...
Ku-Band 12GHz RF Power Amplifier PA , RF Power Amplifier Module VBE RF Power Amplifier Module Introdutions: VBE solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA...
Product Overview The Nexperia PBSS5350Z is a 50 V, 3 A PNP low VCEsat transistor designed for efficient power management. This transistor offers a low collector-emitter saturation voltage (VCEsat), high collect...
... (hFE) at high IC. These features contribute to high efficiency with less heat generation and a smaller PCB area requirement compared to conventional transistors. The PBSS303PX is...
... Power Optical Amplifier EDFA WDM With JDSU Pump JZEYDFA Main Features: ■ High performance:adopting multiple mode high power bump laser, 940nm and 980nm dual bump laser, low noise, low distortion, broadband,...
... Power Optical Amplifier EDFA WDM With JDSU Pump JZEYDFA Main Features: ■ High performance:adopting multiple mode high power bump laser, 940nm and 980nm dual bump laser, low noise, low distortion, broadband,...