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TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN) FEATURE Power Switching Applications MARKING 13002B=Device code Solid dot=Green molding compound device, if none,the normal device XXX=......
...Transistors B772M TRANSISTOR (PNP) FEATURES Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage ...
TO-126 Plastic-Encapsulate Transistors 3DD13005HD55 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications Ÿ Good high temperature Ÿ Low saturation voltage Ÿ High speed switching MARKING JCET Logo 13005HD55=De...
...Transistors A44 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto...
SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) FEATURE Low forward voltage Fast reverse recovery time Marking :B3 Solid dot = Green molding compound device,if none,the normal device. MAXIMUM RA...
AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.This device is suitable f...
AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.This device is suitable f...
TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE Ÿ power switching applications MARKING 13003B=Device code Solid dot=Green molding compound device, if none,the normal device XXX=......
TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN) FEATURE Power Switching Applications MARKING 13002B=Device code Solid dot=Green molding compound device, if none,the normal device XXX=......
...Transistors B772M TRANSISTOR (PNP) FEATURES Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage ...
TO-126 Plastic-Encapsulate Transistors 3DD13005HD55 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications Ÿ Good high temperature Ÿ Low saturation voltage Ÿ High speed switching MARKING JCET Logo 13005HD55=De...
...Transistors A44 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto...
SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) FEATURE Low forward voltage Fast reverse recovery time Marking :B3 Solid dot = Green molding compound device,if none,the normal device. MAXIMUM RA...
...Power Transistor 2SC4552 The 2SC4552 is an NPN power transistor designed for driver applications in DC/DC converters and actuators. It features a high collector-emitter sustaining voltage of 60V (Min), high ...
...Power Transistor designed for high voltage and general purpose applications. It offers a high collector-emitter sustaining voltage of -300V, a minimum DC current gain of 100 at -50mA, and a low collector sat...
Low-Power IoT TFT Modules for Smart Home & Appliances Our TFT LCD modules are engineered to power smart home ecosystems, delivering intuitive touch interfaces, energy-efficient operation, and seamless integrati...
...Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =...
...Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =...
...Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 works f...
... VOLTS − 250 WATTS Applications: • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.4 [1]s at IC = 25 A • Pb−Free ......