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...Power Transistor 2SD1899 The ISC 2SD1899 is a Silicon NPN Power Transistor designed for high transition frequency applications. It features low collector saturation voltage and is 100% avalanche tested, ensu...
...power transistors designed for surface-mounting applications. Housed in a SOT89 (SC-62) plastic package, these transistors offer high collector current capability (IC and ICM), multiple current gain selectio...
...Power Transistor with Integrated Diode The PHD13003C is a high voltage, high speed, planar passivated NPN power switching transistor featuring an integrated anti-parallel emitter-collector diode. It is desig...
...Power Transistor The FMMT491 is a 60V NPN medium power transistor designed for general-purpose applications. It offers a continuous collector current of 1A and a peak pulse current of 2A, with a low equivale...
...Power Transistor designed for high-power audio, disk head positioners, and other linear applications. It is also suitable for power switching circuits such as relay or solenoid drivers, DC-DC converters, and...
Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequenc...
Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequenc...
PRF21180 is a PTC Thermistors for Overcurrent Protection / for Inrush Current Suppression / for Overheat Sensing Lead Type . Part NO: PRF21180 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting ...
...low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5...
... advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial pow...
...low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5...
...low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5...
...low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5...
... advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial pow...
... through revolutionary cool-running High-Density Class-D technology with "near-zero" thermal buildup 3. Ultra-efficient switch-mode power supply for noise-free audio, superior transient response and low powe...
AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excelle...
AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent therm...
AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excelle...
AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent therm...
TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE Ÿ power switching applications MARKING 13003B=Device code Solid dot=Green molding compound device, if none,the normal device XXX=......