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AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resis...
...Power Transistor For Battery Protection 60V/5A Feature Description 60V/5A R DS(ON) = 40 mΩ(typ.)@V GS = 10V R DS(ON) = 48 mΩ(typ.)@V GS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and...
...Power Transistor For Battery Protection 60V/5A Feature Description 60V/5A R DS(ON) = 40 mΩ(typ.)@V GS = 10V R DS(ON) = 48 mΩ(typ.)@V GS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and...
...Power Electronics High Performance Low-Power Solution Product Parameters: Drain-Source Voltage: 30V Continuous Drain Current: 30A Drain-Source On-Resistance: 0.019 Ohm Maximum Power Dissipation: 4.5W Packagi...
... z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management MAXIMUM R...
... z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management MAXIMUM R...
...Silicon Low Saturation Transistor The FMMT619 is a 50V NPN silicon low saturation transistor designed for various electronic applications. It offers a continuous collector current of 2A, low saturation volta...
...Low Frequency Transistor The 2SC5663 and 2SC5585 are low-frequency transistors designed for amplifier and driver applications. They offer high current capability and low VCE(sat) for efficient operation. Ava...
QM4803D N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gatecharge for most of the sy...
AOD480 30V N-Channel MOSFET General Description The AOD480 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching a...
QM4803D N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gatecharge for most of the sy...
AOD480 30V N-Channel MOSFET General Description The AOD480 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching a...
Product Overview The 2SD2583 is a Silicon NPN Power Transistor designed for audio frequency amplifier and switching applications. It features high collector current capability (IC= 5A), low saturation voltage (...
Product Overview The MJD32CQ is a PNP Power Transistor designed for general purpose amplifier and low speed switching applications. It features UL-94 V-0 flammability rating, halogen-free construction, and Mois...
Product Overview The MJD31CQ is an NPN Power Transistor designed for general purpose amplifier and low speed switching applications. It features an epoxy casing that meets UL-94 V-0 flammability rating and is h...
... pulse current of up to 6A, along with a low saturation voltage for efficient operation. This device is AEC-Q101 qualified, ensuring high reliability.Product Attributes Brand: Diodes ......
Product Overview The FCX493 is a 100V NPN medium power transistor in a SOT89 package. It offers a high continuous current of 1A, low saturation voltage, and is designed for applications such as load management,...
Product Overview The LBTP180Z4TZHG and S-LBTP180Z4TZHG are PNP medium power transistors designed for various applications. They feature high current and low voltage capabilities. The S-prefix variants are AEC-Q...
Product Overview The LBTP180Y3T1G and S-LBTP180Y3T1G are PNP medium power transistors designed for general purposes and driver stages of audio amplifiers. They offer high current and low voltage capabilities, w...
CoolMOSTM Power Transistor Features PG-TO247 • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rat...