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TIP35C Silicon NPN Power Transistors switching power mosfet low power mosfet STOCK LIST HT7610B 2460 HOLTEK 16+ SOP/DIP 74AHC00PW 7500 15+ TSSOP IRL540NPBF 1800 ......
... range.The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. Applications: • Hig...
... Power Transistor IRF540NPBF Description: Superior Design for Advanced Electronics If you're looking for an advanced power transistor for your electronics projects, look no further than the IRF540NPBF. T...
...Power Capability: With a maximum drain current of 12A and a voltage ratingof 600v, the SIHF12N60E-E3 N-Channel Transistor is capable of handling highpower applications. 2. Low On-Resistance: The MOSFET's low...
...) High-Density SON 5-mm × 6-mm Footprint Optimized for 5-V Gate Drive Low-Switching Losses Ultra-Low-Inductance Package RoHS Compliant Halogen Free Lead-Free Terminal Plating 2 Applications Synchronous Buck ...
...low-noise NPN silicon epitaxial bipolar transistor manufactured using a planar process. It features high power gain, a low noise figure, a large dynamic range, and ideal current characteristics. Packaged in ...
...low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A RDS(ON...
...low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES N-CH VDS =-40V,ID =20A RDS(ON) < 25mΩ @ VGS=-10V P-CH VDS =-40V,ID =-18A RDS(ON) <-42mΩ @ VGS=-10V Application PWM applications Load switch Power......
WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the sy...
... that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C rss .In addition, switching be...
AOD442G 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application Industrial and Motor Drive applications Pa...
...Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. The SOT-23S package is widely preferred for commercial-...
... that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C rss .In addition, switching be...
... that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C rss .In addition, switching be...
...low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A RDS(ON...
...low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES N-CH VDS =-40V,ID =20A RDS(ON) < 25mΩ @ VGS=-10V P-CH VDS =-40V,ID =-18A RDS(ON) <-42mΩ @ VGS=-10V Application PWM applications Load switch Power......
WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the sy...
... that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C rss .In addition, switching be...
AOD442G 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application Industrial and Motor Drive applications Pa...
...Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. The SOT-23S package is widely preferred for commercial-...