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...Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r...
...Power Transistor For High Gain And Efficiency HMC199MS8ETR RF Power Transistors Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology....
...power transistor designed for high-speed switching and low-frequency amplification. It features high-speed switching capabilities with a typical fall time of 80ns, low saturation voltage (typically 150mV), a...
... voltage and high power dissipation capability of up to 10W (Max) at TC=25. They are engineered for robust device performance and reliable operation with minimum lot-to-lot ......
Power Transistor IC LM317LZ Low Current Adjustable Voltage Regulator ■ OUTPUT VOLTAGE RANGE: 1.2 TO 37V ■ OUTPUT CURRENT IN EXCESS OF 100 mA ■ LINE REGULATION TYP. 0.01% ■ LOAD REGULATION TYP. 0.1% ■ THERMAL OV...
...Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of ef...
...Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of ef...
... low saturation voltage (VCE(sat) < 100mV @ 1A) and a low equivalent on-resistance (RCE(sat) = 44m). The transistor offers high gain hold-up with hFE specified up to 10A. It is available in lead-free, RoHS c...
... RF Power Transistor 300V 7A 60W TO-220 Package Product Listing: Product Name: AD630ARZ RF Power Transistor Product Description: This AD630ARZ RF Power Transistor is a high-performance, high-efficiency devic...
...Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -3...
...Transistors FMMT491 TRANSISTOR (NPN) FEATURE Low equivalent on-resistance Marking :491 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collec...
...Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -3...
...Transistors FMMT491 TRANSISTOR (NPN) FEATURE Low equivalent on-resistance Marking :491 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collec...
...60V NPN Medium Power Transistor The FZT651 is a 60V NPN medium power transistor designed for high continuous current applications. It offers a high continuous collector current of 3A and a peak pulse current...
...a Silicon PNP Power Transistor designed for general-purpose power amplification and switching. It features a low Collector-Emitter Saturation Voltage (VCE(sat) = 1.0V Max at IC = 8A) and fast switching speed...
... Switching Product Summary The G40N10 uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Batter...
... Switching Product Summary The G40N10 uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Batter...
... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitabl...
... over the 0.5 to 2.7GHz frequency range with a maximum output power of 50W. The device offers an extremely wide instantaneous bandwidth, high efficiency, and excellent linearity performance. Features: • Powe...
...Power Transistors The SL44H11 is a silicon NPN power transistor designed for general-purpose power amplification and switching. It features a low collector-emitter saturation voltage (VCE(sat)= 1.0V(Max)@ IC...