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Total 100000 products for low power transistor Manufacture & Suppliers

600mA Silicon Power Transistor NPN Power Transistor High Current

...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collec...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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600mA Silicon Power Transistor NPN Power Transistor High Current

...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collec...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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A42 Silicon NPN Power Transistors , NPN Power Transistor High Current

...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collec...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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SI4702-C19-GMR RF Power Transistor - High Performance Reliable And Durable

SI4702-C19-GMR RF Power Transistors Product Overview: The SI4702-C19-GMR is a high performance RF power transistor designed for RF power amplifier applications in industrial and consumer applications. This devi...

Shenzhen Sai Collie Technology Co., Ltd.
China

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SI4010-C2-GTR RF Power Transistor - High Performance And Reliability

..., and excellent ruggedness and reliability. The SI4010-C2-GTR is ideal for use in power amplifiers, switching circuits, and linear amplifiers. Features: - High Gain: up to 24 dB - High Efficiency: up to 40% ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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200v Silicon Power Transistor High Current Transistor Low Leakage

MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE �� Low Leakage �� High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25�� unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25�� unless othe...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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200v Silicon Power Transistor High Current Transistor Low Leakage

MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE �� Low Leakage �� High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25�� unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25�� unless othe...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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NPN Medium Power Transistor Diodes FZT853TA 100V Collector Current 6A Low RCE SAT and RoHS Compliant

...10A, and low saturation voltage. With a low equivalent on-resistance (RCE(SAT) = 50m) and specified hFE up to 10A, it offers high gain hold-up. This device is AEC-Q101 ......

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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IRFR3410TRPBF MOSFET Power Transistor High-Performance Low On-Resistance for Maximum Efficiency

IRFR3410TRPBF MOSFET Power Transistor High-Performance Low On-Resistance for Maximum Efficiency Product Parameters: �� Drain-Source Voltage: 60V �� Gate-Source Voltage: ��20V �� Continuous Drain Current: -14A �� Pow...

Shenzhen Sai Collie Technology Co., Ltd.
China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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OEM High Voltage Mosfet Transistor / AP10H03DF Uhf Power Transistor

...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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OEM High Voltage Mosfet Transistor / AP10H03DF Uhf Power Transistor

...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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FDD86569-F085 Mosfet Transistor High Performance Solutions low power consumption

...Power Electronics Product Description: The FDD86569-F085 MOSFET Power Electronics is a high-performance, low-voltage, low-power device designed for use in a wide range of power conversion and control applica...

Shenzhen Sai Collie Technology Co., Ltd.
China

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RF Power Transistors FHC40LG Super Low Noise HEMT FUJITSU RF Power Transistors RF MODULE

FHC40LG is a Super Low Noise HEMT. Part NO: FHC40LG Brand: FUJITSU Date Code: 04+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwav...

Mega Source Elec.Limited
China

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RF Power Transistors FHX13LG Super Low Noise HEMT FUJITSU RF Power Transistors RF MODULE

FHX13LG is a Super Low Noise HEMT. Part NO: FHX13LG Brand: FUJITSU Date Code: 04+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwav...

Mega Source Elec.Limited
China

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Durable High Power Amplifier Transistor / Hf Power Transistor Customized

AOD424 20V N-Channel MOSFET General Description The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for load switch and b...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Durable High Power Amplifier Transistor / Hf Power Transistor Customized

AOD424 20V N-Channel MOSFET General Description The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for load switch and b...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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