| Sign In | Join Free | My burrillandco.com |
|
... advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial pow...
...low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5...
...low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5...
...low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5...
... advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial pow...
... on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES RDS(ON) < 1.75Ω @ VGS...
... on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES RDS(ON) < 1.75Ω @ VGS...
AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excelle...
AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent therm...
AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excelle...
AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent therm...
Product Overview The 2N6036 is a Silicon PNP Darlington Power Transistor designed for general-purpose amplifier and low-speed switching applications. It offers a high DC Current Gain (hFE) of 750(Min) @ IC= -2A...
Product Overview The MJD127T4G is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, h...
...TIP125/126/127 are Silicon PNP Darlington Power Transistors designed for general-purpose amplifier and low-speed switching applications. They feature a TO-220C package, high DC current gain, and low collecto...
Product Overview The MJD122D is a Silicon NPN Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, hig...
Product Overview The MJD127D is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, hig...
SI4010-C2-GTR RF Power Transistor Product Features: 900 MHz to 2.7 GHz Frequency Range 10 W Output Power at 2.4 GHz 30 V Nominal Drain Voltage 6.8 dB Typical Gain at 2.4 GHz 56% Typical Efficiency at ...
Product Listing: SI4421-A1-FTR Parameters: Type: RF Power Transistor Technology: GaN Package Type: SMD Operating Voltage: 40V Operating Frequency: 0.5 - 3 GHz Output Power: 50W Power Gain: > 12.5 ...
HMC8038LP4CETR RF Power Transistor Specifications: Frequency Range: DC - 6GHz Maximum Power Output: 28dBm Gain: 15.5dB Supply Voltage: 3.5V Operating Temperature: -55C to +150C P1dB Output Power: ...
HMC915LP4ETR RF Power Transistor - High Performance High Efficiency Product Specifications: - Frequency Range: 9-10GHz - Power Gain: 13 dB - Output Power: 23 dBm - Supply Voltage: +5V - Current Consumption: 1.2...