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... maneuverability, small tonnage, simple operation. 3.Wide application range, high construction efficiency, stable performance. 4.Head adopt reversible design Performance Parameter Unit Value Max. torque kN.m...
...) @ 25°C 680mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.3 nC @ 4.5 V Vgs (Max) ±8V In...
...Performance Reliable Switching Solution Applications Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 3A (Ta...
...Performance N-Channel TO-252-3 Enhanced Reliability Durability Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 2...
...Performance Reliable Power Switching Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6A (Ta), 26A (Tc) Drive Voltage (M...
... (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.1mOhm @ 35A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss...
...Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 19...
... (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 18mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss)...
...Performance Voltage Gate Charge RDS Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 238mA (Tj) Drive Voltage (Max Rds ...
...Performance FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50 V Current - Continuous Drain (Id) @ 25°C 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ I...
... (Ta), 240A (Tc) Rds On (Max) @ Id, Vgs 1.21mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.5V @ 190µA Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 4960 pF @ 25 V...
...Performance Low On Resistance High Speed Switching FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 1.25A (Ta) Drive Voltage (Max ...
...Performance High-Voltage N-Channel MOSFET Power Electronics for Optimized Power Conversion Efficiency FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V Current - Continu...
...°C 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 69mOhm @ 22A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V Vgs (Max) ±30V Input Capacitance (Ciss)...
...Performance Low-Voltage Switching Solutions for Your Electronic Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 310m...
...) @ 25°C 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 350mOhm @ 850mA, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6 nC @ 5 V Vgs (Max) ±20V Input Capaci...
... (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 307mOhm @ 2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V Vgs (Max) ±25V Input Capacitance (Ciss)...
...Performance High-Efficiency Switching for Heavy-Duty Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta), 44A...
...Performance Reliable Switching Solution for Power Conversion Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 120A (...
...Performance Low On-Resistance Switching for Superior Efficiency and Reliability FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25 V Current - Continuous Drain (Id) @ 25°C 4...