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IRF540NS N-Channel 100V 33A 130W D2PAK MOSFET with Fast Switching Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rat...
IRLR2905ZTRPBF MOSFET Power Transistor High Performance Low On Resistance Fast Switching Features: • Logic Level Gate Drive, 4.5V to 20V • Low On-Resistance ......
SI2305CDS-T1-GE3 N-Channel MOSFET Power Transistor for High-Speed Switching Applications Product Features: N-Channel MOSFET 30V drain-source voltage 0.005 maximum on-state resistance 1.5A (Tc) continuo...
ON Semiconductor NTMFS4C55NT1G MOSFET Power Transistor 4A 55V N-Channel Ultra-Low On-Resistance FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain ...
FGH60N60SMD 600V 60A Field Stop IGBT Power Transistor Features Maximum Junction Temperature : TJ =175oC Positive Temperaure Co-efficient for easy parallel operating High current capability Low saturatio...
IRF540NS N-Channel 100V 33A 130W D2PAK MOSFET with Fast Switching Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rat...
BLF188XR RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 24.4dB 1400W SOT539A Features eXtremely rugged high-power delivery up to 1400 W Excellent stability under severe mismatch conditions Compact and ea...
MRF6V3090NBR1 RF Mosfet LDMOS 50V 350mA 860MHz 22dB 18W TO-272 WB-4 Designed for broadcast and commercial aerospace broadband applications with frequencies from 470 to 1215 MHz. Features 1, Capable of Handling ...
Quick Detail: MHW105 - Motorola, Inc - Hybrid Power Module Description: The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 ...
Quick Detail: MHW807-1 - Motorola, Inc - UHF POWER AMPLIFIERS Description: Designed specifically for mobile cellular radio applications. The MHW807 Series amplifiers are capable of wide power range control, ope...
...POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS. Part NO: MJ300AV100 Brand: MOTOROLA Mounting Type: Screws Date Code: 03+ Quality Warranty: 3 Months Overview We specialize in high power and pow...
...POWER TRANSISTOR INSULATED TYPE. Part NO: QM10HB-H Brand: MITSUBISHI Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famou...
...Power Transistor Lead Forming Machine Usage: This machine is used to form/bend power transistor, including TO-92, TO-126, TO-3P, TO-220, etc Specifications: Voltage:220V AC60Hz/50Hz 90W Size:L360 *W380*H430(...
... SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power am...
Quick Detail: MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM handheld radio. The MHW903, MHW953 and MHW954...
... speaker, subwoofers, subwoofer, woofers, and amplifier, flight case and racks. MT series amplifier features: With perfect sound, high power and fast power supply system and...
Quick Detail: MHW720A1 - Motorola, Inc - UHF Power Amplifiers Description: Capable of wide power rang e control as encountered in UHF cellular telephone applications. MHW720A1 400 440 MHz MHW720A2 440 4...
Quick Detail: MRF141G - Motorola, Inc - N-CHANNEL BROADBAND RF POWER MOSFET Description: Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broa...
8205S TSSOP-8 Plastic-Encapsulate MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < @VGS = 4.5V 25 mz 20z RDS(on) < @VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Lo...
6N60 Z 6.2A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resist...