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TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP) FEATURE High DC Current Gain and Large Current Capability MARKING M28S=Device code Solid dot=Green molding compound device, if none,the normal device...
TO-92 Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE High voltage MARKING A42=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE XXX=Code ORDERING INFORMA...
TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR (NPN) FEATURE General Purpose Switching Application MARKING 2N5551=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank...
TO-92 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN) FEATURE Excellent hFE linearity Low noise Complementary to A733 MARKING C945=Device code Solid dot=Green molding compound device, if none,the no...
SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base V...
... speed (tf= 750ns Max), and low saturation voltage (VCE(sat)= 1.0V Max @ IC= 5A). This transistor is specifically designed for use in horizontal deflection output stages of TVs and CRTs.Product Attributes Br...
... robust device performance and reliable operation. This transistor is suitable for use in high frequency and efficiency converters, as well as linear and switching industrial equipment.Product Attributes Bra...
...Power Transistor designed for general-purpose switching and amplifier applications. It offers an excellent Safe Operating Area, a DC Current Gain (hFE) of 20-70 @ IC=-4A, and a Collector-Emitter Saturation V...
...2SD1047 is a Silicon NPN Power Transistor designed for high-current applications. It features a high collector-emitter breakdown voltage of 140V, good linearity of hFE, and a wide area of safe operation. Thi...
...Power Transistor designed for high-voltage switching igniter applications. It features a high Collector-Emitter Sustaining Voltage of 300V(Min), a low Collector-Emitter Saturation Voltage of 2.0V(Max) @ IC=4...
... PNP Darlington Power Transistors designed for general-purpose amplifier and low-speed switching applications. They feature a TO-220C package, high DC current gain, and low collector saturation voltage. Thes...
...Overview The JSMICRO TIP2955 is a silicon PNP power transistor designed for general-purpose switching and amplifier applications. It features a TO-247 package and is a complement to the TIP3055. This transis...
Product Overview The 2SD1782K is a power transistor designed for driver applications. It features a low VCE(sat) of 0.2V (Typ.) and a high breakdown voltage of BVCEO=80V. This transistor complements the 2SB1198...
...switching NPN power transistor designed for various applications. It features a low saturation voltage, enabling efficient operation. Pb-free packages are available, contributing to environmental considerati...
IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista...
...Power Transistor High Voltage High Current Switching Device Parameters: • Drain-Source Voltage (Vdss): 100V • Current - Continuous Drain (Id) @ 25°C: 66A • Rds On (Max) @ Id, Vgs: 10 mOhm @ 10V, 33A • Vgs(th...
IRFR3410TRPBF MOSFET Power Transistor High-Performance Low On-Resistance for Maximum Efficiency Product Parameters: Drain-Source Voltage: 60V Gate-Source Voltage: 20V Continuous Drain Current: -14A Pow...
IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista...
... and an all gold metallization system. Applications: • Specified for 53– and 60–Channel Performance • Broadband Power Gain @ f = 40 – 450 MHz Gp= 18.2 dB (Typ) @ 50 MHz 19.0 dB (Typ) @ 450 MHz • ......