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Mos Transistor As A Switch

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Total 138 products for mos transistor as a switch Manufacture & Suppliers

FQPF2N60C FQPF2N60 2N60 N Channel Transistor MOSFET 2A 600V TO-220F Original Package

...transistor TO-220F MOS FET N-Channel transistor Original Package Features: 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche te...

Shenzhen Canyi Technology Co., Ltd.
Guangdong

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Transistors TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFETs Transistors 1200V

Transistors TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFETs Transistors 1200V�� Product Description Of TW015N120C,S1F TW015N120C,S1F is Silicon Carbide N-Channel MOS Transistors, suitable for use in Switch...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5m�� RDS(ON) (at VGS=4.5V) < 18m�� General Description �� Low RDS(ON) �� Logic Level Gate Drive �� Excellent Gate ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5m�� RDS(ON) (at VGS = 4.5V) < 15.5m�� General Description The HXY4406A uses advanced trench technology toprovi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V I = 10A VGS = 10V) RDS(ON) < 23m�� (VGS = 10V) RDS(ON) < 35m�� (VGS = 4.5V) General Description The HXY4466 uses advanced trench technology to provide excell...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic Encapsulated

SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120m��@ 10 V < VGS = RDS(on) < 136m��@VGS = 4.5V FEATURE �� High power and current handing capability �� Lead...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converters Load Switching for Portable Applications ......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

50N06P/T 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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60N06HX 60V Mos Field Effect Transistor N Channel Enhancement Mode MOSFET

60N06HX 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devic...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5m�� RDS(ON) (at VGS=4.5V) < 18m�� General Description �� Low RDS(ON) �� Logic Level Gate Drive �� Excellent Gate ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5m�� RDS(ON) (at VGS = 4.5V) < 15.5m�� General Description The HXY4406A uses advanced trench technology toprovi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V I = 10A VGS = 10V) RDS(ON) < 23m�� (VGS = 10V) RDS(ON) < 35m�� (VGS = 4.5V) General Description The HXY4466 uses advanced trench technology to provide excell...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic Encapsulated

SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120m��@ 10 V < VGS = RDS(on) < 136m��@VGS = 4.5V FEATURE �� High power and current handing capability �� Lead...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converters Load Switching for Portable Applications ......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

50N06P/T 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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60N06HX 60V Mos Field Effect Transistor N Channel Enhancement Mode MOSFET

60N06HX 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devic...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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IPD70R1K4P7S Series 700V CoolMOS P7 Power Transistor Field Effect MOS Tube

...Transistor Field Effect MOS Tube Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Excellent thermal behavior • Integrated ESD protection diode • Low switching losses (Eoss) •...

JULUN (H.K)CO.,LTD (DONGGUAN JULUN ELECTRONICS CO.,LTD)
Guangdong,China

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BSH201,215 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount

...Fast switching • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V) GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic lev...

ChongMing Group (HK) Int'l Co., Ltd
China

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PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate Transistor

...MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of ...

ChongMing Group (HK) Int'l Co., Ltd
China

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HXY2300 Mosfet Power Transistor , Field Effect Transistor Fast Switching

SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 m��@ 4.5V 5.0 A < VGS = z RDS(on) < m��@VGS = 2.5V 40 z z 20 40 z RDS(on) < 53 m��@VGS = 1.8V APPLICATION z DC/DC Converters z Load...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Mos Transistor As A Switch

Total 138 products for mos transistor as a switch Manufacture & Suppliers