Total 138 products for mos transistor as a switch Manufacture & Suppliers

• SMD diode, MOS transistor and other transistor

  

  ...transistors is very large. It is a solid semiconductor device with multiple functions such as detection, rectification, amplification, switching, voltage regulation, and signal modulation.Pingshang Technolog...

  Dongguan Pingshang Electronic Technology Co., Ltd.

  Guangdong

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• 11A Mosfet Power Transistor , High Power Transistor High Frequency Switching

  

  60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < m��@VGS = 10 V 65 z RDS(on) < m��@VGS = 4.5V 78 FEATURE TrenchFET Power MOSFET Applications Load Switch for Portable Devices z DC/DC...

  Shenzhen Hua Xuan Yang Electronics Co.,Ltd

  Guangdong,China

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• Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

  

  ..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...

  Beijing Silk Road Enterprise Management Services Co.,LTD

  China

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• N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor

  

  N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (��-MOSVI) 2SK3561 Switching Regulator Applications ��� Low drain-source ON resist...

  Anterwell Technology Ltd.

  Guangdong,China

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• TK13A60D TOSHIBA Field Effect Transistor

  

  ... Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, sing...

  Shenzhen Retechip Electronics Co., Ltd

  Guangdong,China

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• FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8

  

  ... performance Trench technology for extremely low RDS (ON) and fast switching 5. High power and current handling capability 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) .....

  SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

  Guangdong,China

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• NPN transistor Slkor 2SC2873 Y with fast switching time and low collector emitter saturation voltage

  

  ...transistor designed for high-speed switching applications. It features a small flat package, high-speed switching time, and a low collector-emitter saturation voltage. This transistor is complementary to the...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• SILAN SVF840F 8A 500V High Voltage MOS Tube

  

  ...MOS tube Description: SVF840F/D/S/MJ N-channel enhancement mode high voltage power MOS field effect transistor It is manufactured using Silan Microelectronics' F-Cell TM planar high voltage VDMOS process tec...

  Shenzhen Hongxinwei Technology Co., Ltd

  Guangdong,China

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• BSH201 NPN PNP Transistors P Channel 60V 300mA ( Ta ) 417mW ( Ta ) Surface Mount

  

  ...Fast switching • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V) GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic lev...

  DELI ELECTRONICS TECHNOLOGY CO.,LTD

  Guangdong,China

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• Semiconductor N-channel 40V90A MOS Field Effect Transistor of IPD036N04L SOT-252 SMPS Fast Switching MOSFET

  

  ...

  Shenzhen Anxinruo Technology Co., Ltd.

  China

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• TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

  

  MOSFETs Silicon N-Channel MOS (DTMOS���) TK10P60W Applications ��� Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 ��� (typ.) by used to Super Junction Structure : DTMOS (2) ...

  ChongMing Group (HK) Int'l Co., Ltd

  China

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• FQPF2N60C FQPF2N60 2N60 N Channel Transistor MOSFET 2A 600V TO-220F Original Package

  

  ...transistor TO-220F MOS FET N-Channel transistor Original Package Features: 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche te...

  Shenzhen Canyi Technology Co., Ltd.

  Guangdong

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• Transistors TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFETs Transistors 1200V

  

  Transistors TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFETs Transistors 1200V��� Product Description Of TW015N120C,S1F TW015N120C,S1F is Silicon Carbide N-Channel MOS Transistors, suitable for use in Switch...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• IPD70R1K4P7S Series 700V CoolMOS P7 Power Transistor Field Effect MOS Tube

  

  ...Transistor Field Effect MOS Tube Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Excellent thermal behavior • Integrated ESD protection diode • Low switching losses (Eoss) •...

  JULUN (H.K)CO.,LTD (DONGGUAN JULUN ELECTRONICS CO.,LTD)

  Guangdong,China

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• Field Effect Transistor Ao3402 Power Mosfet N-Channel 30v 4a Sot23 Fets Single Marking A2

  

  ... gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. Basic data ​1. product model:AO3402 2. Product features:Switching power supply protection 3. wra...

  KZ TECHNOLOGY (HONGKONG) LIMITED

  China

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• 5A 16 Channel PLC Transistor Module 24V NPN / PNP Input Signal For Servo System

  

  ...Transistor Module 24V NPN / PNP Input Signal For Servo System Transistor amplifying plate is non-contact, DC 24V controlled by 5-24V, transistor amplifying plate is divided into large current and small curre...

  Wenzhou Ginri Power Automation Co., Ltd.

  Zhejiang,China

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• Silicon N Channel MOS FET 2SK2939-90STL RENESAS TO-263 New and Original

  

  Silicon N Channel MOS FET 2SK2939-90STL RENESAS TO-263 New and Original Features ��� Low on-resistance RDS =0.020 �� typ. ��� High speed switching ��� 4 V gate drive device can be driven from 5 V source ��� Part No 2SK2...

  Mega Source Elec.Limited

  China

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• Baby Mark King Size Silicon Transistor D2PAK Electric Cigarette Machine Parts

  

  ...Transistor D2PAK Electric Cigarette Machine Parts A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of...

  HK UPPERBOND INDUSTRIAL LIMITED

  Hong Kong,China

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• Power Mosfet Transistor IC NP110N055PUG 55V 110A 1 N-Channel Switch MOS FIELD EFFECT SOT-263 Electronic Component

  

  MOSFET N-CH 55V 110A TO-263 NP110N055PUG Product Description Packaging Tape & Reel (TR) Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Conti...

  Shenzhen Quanyuantong Electronics Co., Ltd.

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• L4973D3.3-013TR IC REG BUCK ADJ/3.3V 3.5A 20SO STMicroelectronics

  

  ... voltage up to 50V. Realized in BCD mixed technology, the device uses an internal power D-MOS transistor (with a typical RDS(on) of 0.15Ω) to obtain very high efficiency and very fast switching times. Switch...

  Sanhuang electronics (Hong Kong) Co., Limited

  China

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