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High Power MOSFET NTJD1155L Dual P-Channel High Side Load Switch with Level Shift 8V ±1.3A 175mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic compone...
Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge ...
.... Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute Maximum Ratings : Description : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr...
... uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C ...
High Voltage Switching Mosfet Power Transistor With High Thermal Resistance General Description The AOD407 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance...
...Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ...
High Power MOSFET NUS5530MN Integrated with PNP Low VCE(sat) Switching Transistor [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and se...
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM appl...
...MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =12A RD...
... uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C ...
High Voltage Switching Mosfet Power Transistor With High Thermal Resistance General Description The AOD407 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance...
AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or...
... 60V N-Channel MOSFET General Description The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . Those devices are suitable for use in P...
...Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ...
AP2322GN Original General Purpose Power Transistor/MOSFET/Power Switch IC Chips This product is sensitive to electrostatic discharge, please handle with care. This product is not authorized to be used as a crit...
...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced...
... that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs...
..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switchin...
...Mosfet Power Transistor Diodes - General Purpose, Power, Switching SW DBL 100V 215MA HS General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. F...
...mosfet field effect transistors for switched mode power supplies Datasheet:CY-10N60F.pdf Field effect transistor features: Drain Current is 9.5A, 600V, RDS(on) =0.73Ω @VGS =10 V Low gate charge MOSFET simpli...