| Sign In | Join Free | My burrillandco.com |
|
...Mosfet Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ga...
... and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* Symbol Parameter Value Units VDG Drain-Gate Voltage ......
... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Feat...
Positive Voltage Regulators Switching Power Mosfet Transistor L7805CP Internally Limited OUTPUT CURRENT TO 1.5A OUTPUT VOLTAGES OF 5; 5.2; 6; 8; 8.5; 9; 10; 12; 15; 18; 24V THERMAL OVERLOAD PROTECTION S...
2SC3150L TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 3A I(C) | TO-220AB switching power mosfet STOCK LIST SN75ALS176DR 8168 TI 13+ SOP-8 THS3091D 1037 TI 16+ SOP-8 THS4001CDR 18605 TI 16+ SOP-8 THS4130IDR 1280 TI ...
HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM appl...
...MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =12A RD...
Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge ...
... uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C ...
High Voltage Switching Mosfet Power Transistor With High Thermal Resistance General Description The AOD407 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance...
AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or...
... 60V N-Channel MOSFET General Description The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . Those devices are suitable for use in P...
...Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ...
...MOSFET 60V 115mA N-Channel SC-70 SOT-323 These Devices are Pb−Free and are RoHS Compliant , Ultra−Small Surface Mount Package,Low Input/Output Leakage, Fast Switching Speed,Improved system efficiency. MMBT70...
.... Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute Maximum Ratings : Description : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr...
AP2322GN Original General Purpose Power Transistor/MOSFET/Power Switch IC Chips This product is sensitive to electrostatic discharge, please handle with care. This product is not authorized to be used as a crit...
P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34m (VGS = -10V) RDS(ON) < 54m (VGS = -4.5V) General Description The AO4449 uses advanced trench tec...
...Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ...
High Voltage Switching Mosfet Power Transistor With High Thermal Resistance General Description The AOD407 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance...
... uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C ...