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JY16M N Channel 600V TO220F-3 Package Enhancement Mode Power MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY16M utilizes the latest trench processing techniques to achieve the high cell density and redu...
JY14M N Channel Enhancement Mode Power MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY14M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance ...
JUYI 500W 8A N Channel Enhancement Mode Power MOSFET Factory for 3 Phases DC Motor Driver GENERAL DESCRIPTION The product utilizes the advanced planar processing techniques to achieve the highcell density and r...
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS...
AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent...
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS...
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS...
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS...
AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent...
... for operation with gate voltages as low as 10V. This device is designed for battery protection and other switching applications, providing high continuous drain current and low on-......
... and low gate charge, with operation possible at gate voltages as low as 1.8V. This device is ESD protected and suitable for applications such as load switches and PWM applications. Product Attributes Brand:...
Product Overview The AP90N02NF is a 20V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2...
...operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications, including DC/DC converters and LED backlighting. ......
...Overview The Belling BLM2302 is an N-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as ...
... The Belling BLM3407 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low...
Product Overview The BLM2010E is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as...
... The Belling BLM4953 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages ...
Product Overview The BLM8205 is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate voltages as...
... to operate with gate voltages as low as 4.5V. This high-power and high-current handling device is lead-free and suitable for applications such as battery switches, ......
...Overview The Belling BLM2301 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and the capability to operate with gate volta...