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...MOSFET NFET SO8 30V N - Channel Transistor MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gat...
...MOSFET BSZ100N03MS GSP000311510 MSP430F5514IRGCT LPC812M101JD20 Discrete Semiconductors MOSFET OptiMOS TM3 M-Series Power-MOSFET, 30 V Features ●Optimized for 5V driver aplication (Notebook, VGA, POL) ●Low F...
...MOSFET NFET SO8 30V N - Channel Transistor MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gat...
...MOSFET BSZ100N03MS GSP000311510 MSP430F5514IRGCT LPC812M101JD20 Discrete Semiconductors MOSFET OptiMOS TM3 M-Series Power-MOSFET, 30 V Features ●Optimized for 5V driver aplication (Notebook, VGA, POL) ●Low F...
...Driver Ic controllers Drivers Automotive Tssop-28 Description Allegro MicroSystems,A3941KLPTR-T,TSSOP-28, Motor / Motion / Ignition Controllers & Drivers AUTOMOTIVE FULL BRIDGE MOSFET The A3941 is a full-bri...
...generates its own self-contained gate drive output voltage, eliminating the need for a floating secondary side DC power supply. When paired with a customer-selected external FET, a ......
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
5G03SIDF 30V N+P-Channel Enhancement Mode MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level...
...reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) ......
... Mosfet Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excell...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
...reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) ......
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
5G03SIDF 30V N+P-Channel Enhancement Mode MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level...
... Mosfet Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excell...
...Enhancement Mode MOSFET from Yongyuan Microelectronics Technology Co., Ltd. It utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, with the capability to operate at gate vol...
...AP40P04D is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This M...
...Channel MOSFET designed for applications such as synchronous rectification, power management, and load switching. It features proprietary new trench technology, a fast recovery body diode, and low gate charg...
... with gate voltages as low as 5V. This MOSFET is designed for applications such as battery protection and general switching tasks. It features a VDS of -100V and a continuous drain current of -3A. Product .....