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Product Overview The 2MBI150VA-120-50 is a high-speed IGBT module (V series) designed for AC-switch applications in UPS and PCS systems. It features voltage drive, low inductance module structure, and a 2-in-1 ...
IGBT High Speed 5 with RAPID 1 Diode - IKP30N65H5 The IKP30N65H5 is a high-speed 5th generation IGBT from Infineon, built on TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diod...
Product Overview Utilizing novel field stop IGBT technology, ON Semiconductor's FGH80N60FD2 offers optimal performance for induction heating and PFC applications. This IGBT is designed for scenarios requiring l...
BTA16 Series 16A 3-Quadrant TRIACs The BTA16 series TRIACs are designed for high shock loading capability and excellent commutation performance, making them ideal for inductive loads. They are commonly used in ...
Product Overview The Jiangsu Weida Semiconductor BTA26/BTB26 Series 25A Triacs are designed for high current shock loading with excellent dv/dt rates and resistance to electromagnetic interference. These triacs...
...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This b...
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
...POWER MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high...
Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F Logic Level Transistor DESCRIPTION The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as ...
...POWER MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high...
Powerful Logic Level Transistor / N Channel Mosfet Switch 2N60 TO-220F Logic Level Transistor DESCRIPTION The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as ...
... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ......
... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ......
Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tes...
Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tes...