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2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capabl...
... ■ THERMAL SHUTDOWN ■ CURRENT LIMITATION ■ PROTECTION AGAINST LOSS OF GROUND AND LOSS OF VCC ■ VERY LOW STAND-BY POWER DISSIPATION ■ REVERSE BATTERY PROTECTION (*) ■ IN COMPLIANCE WITH THE 2002/95/EC EUROPEA...
...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This b...
... to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,...
... to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well...
LM7805C Series Voltage Regulators high voltage power mosfet , dual power mosfet Features Output current in excess of 1A Internal thermal overload protection No external components required Output transi...
Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and...
... clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET in...
...MOSFET with Ultra-Low 40mandOmega; RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs andnbsp; Featuresandnbsp; AEC-Q101 qualified (Pleas...
...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse ......
...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse ......
...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse ......
...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse ......
...% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) High Current Transistor Applications Power Management for DC/DC Switching application Ordering and Marking Inf...
Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge ...
AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resis...
AOD442G 60V N-Channel MOSFET General Description The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . Those devices are suitable for use ...
Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge ...
...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse ......
...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse ......