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..., oscillator, thermal shutdown circuit, fault protection and other control circuitry onto a monolithic device. Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes...
...-by-Cycle Current Limit ■ No Control Loop Compensation Required ■ 10,000:1 PWM Dimming Range ■ 250:1 Analog Dimming Range ■ Supports All-Ceramic Output Capacitors and Capacitorless Outputs ■ Low Power Shutdo...
...MOSFET Low Rds(on) 65mΩ Fast Switching High Frequency Robust Body Diode High Temp Operation TO-264 Package Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Low RDS(on) and Q...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low I...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configurationis ideal for low ...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low I...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configurationis ideal for low ...
...MOSFET low power mosfet SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.400 ID =-1.1A FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V ......
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V ......
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V ......
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V ......
FB180SA10 is a Power MOSFET Quality control Mega Source Elec. Limited offers 90 days warranty and are strict to ISO9001:2008 QMS to reduce your purchasing risk. 1 ......
IXFN150N10 is a HiPerFET Power MOSFETs Quality control Mega Source Elec. Limited offers 90 days warranty and are strict to ISO9001:2008 QMS to reduce your purchasing risk. 1 External Inspection Strict external ...
APT10026JN is a N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Quality control Mega Source Elec. Limited offers 90 days warranty and are strict to ISO9001:2008 QMS to reduce your purchasing risk. 1 ......
... is 8-LFPAK, Surface Mount. Specification Of NTMJS1D4N06CLTWG Part Number NTMJS1D4N06CLTWG Technology MOSFET (Metal Oxide) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.3mOhm @ .....
...Power MOSFET 5-DFN IC Chips Product Description Of NTMFS005N10MCLT1G NTMFS005N10MCLT1G is 100V, 5.1mOhm, 105A MOSFET – Power, Single N-Channel Transistors. Specification Of NTMFS005N10MCLT1G Part Number NTM...
TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current Logic Input Will Withstand Negative Swing Up to 5V ESD Protected ..............
...Controller 300W Wind + 200W Solar 1. Features Design for off-grid wind/solar hybrid system Integrated design of wind controller and solar controller Applicable to different kinds of batteries PWM stepless un...
... arranged mainly in power control unit. Moreover, it employs high accuracy PI integrated with MEA control technology, and frequency limiting modulation for shunt, so as to modulate multiple solar cell arrays...