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AOD424G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Battery ......
AOD442G 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application Industrial and Motor Drive applications .....
...MOSFET General Description The AOD482/AOI482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for boost converters and synchro...
...Mosfet Power Transistor LED Lighting Drivers 1.6MHz 1A Constant Crnt Buck LED Dvr 1 Features LM3409-Q1 and LM3409HV-Q1 are Automotive Grade Products: AEC-Q100 Grade 1 Qualified 2-Ω, 1-A Peak MOSFET Gate Driv...
...Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =...
...Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =...
Mosfet Power Transistor IXFH160N15T2 160A 150V 880W N-Channel TrenchT2 Description DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a ...
...Mosfet Power Module Hybrid Inverter Circuit SIP Full Molded STK621-220A INVERTER POWER HYBRID MODULE SIP Full Molded Package Overview This IC is a 3-phase inverter power hybrid IC containing power elements (...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low I...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining ...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low I...
CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs 1 Features Extremely Low Resistance Ultra-Low Qg and Qgd Low-Thermal Resistance Avalanche Rated Lead-Free ......
...Mosfet Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Order code VDS RDS(on)max ID PTOT STP110N8F6 80 V 0.0065 Ω 110 A 200 W Very low on-resistance Very low gate charge High av...
...Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high level...
...Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high level...
... Loss Low Forward Voltage High Surge Current Capability Low Inductance Package Applications Inversion Welder Uninterruptible Power Supply (UPS) Plating Power Supply Ultrasonic Cleaner and...
...MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) ...