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...Mosfet Power Transistor MOSFET MOSFET; -80V P-Chan PowerTrench Features MaxrDS(on) =183mΩatVGS =-10V,ID =-2.1A MaxrDS(on) =233mΩatVGS =-4.5V,ID =-1.9A High performance trench technology for extremely low rDS...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...
Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Paramet...
...MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-220FP Tube Description : UniFETTM MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to re...
...MOSFET N-CH 250V 44A 3-Pin(3+Tab) TO-220FP Tube Description : UniFETTM MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to re...
... on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES RDS(ON) < 1.75Ω @ VGS...
... on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES RDS(ON) < 1.75Ω @ VGS...
...Mosfet Power Transistor MOSFET CSD17578Q3A 30 V 8-VSONP 1 Features Low Qg and Qgd Low RDS(on) Low Thermal Resistance Avalanche Rated Pb-Free RoHS Compliant Halogen Free SON 3.3 mm × 3.3 mm Plastic Package 2 ...
...Mosfet Power Transistor LED Lighting Drivers Constant Current N-Channel Controller wi 1 Features AEC Qualified for Automotive Applications – Device Temperature Grade 1: −40°C ≤ TA ≤ 125°C VIN Range from 4.5V...
LED Solar Street Light 5054 Beads IP66 Waterproof, Dusk to Dawn Automatic Lighting with Light & Time Control Focus on Bulk Supply & Factory Strength Foshan Source Factory Direct Supply Solar Street Light, Bulk ...
...MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and ...
...MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and ...
BSZ100N06LS3G Mosfet Power Transistor MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/......
...MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host ...
WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the sy...
...MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host ...