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WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the sy...
STP55NF06FP 55A 60V N-Channel Power MOSFET with andlt;0.02andOmega; RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control andnbsp; Features 1:Low On-R...
... Cycle-by-Cycle Current Limit No Control Loop Compensation Required Separate PWM Dimming and Low Power Shutdown Supports All-Ceramic Output Capacitors and Capacitor-less Outputs Thermal Shutdown Protection S...
...MOSFET Description The WST2078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and...
...MOSFET Description The WST2078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and...
MOSFET Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layo...
MOSFET Transistors TO-3P TIP147 10A 100V PNP Darlington Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “...
...Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET 1 Features Optimized for 5-V Gate Drive Ultra-Low Qg and Qgd Low Thermal Resistance Pb-Free RoHS Compliant Halogen-Free SON 2-mm × 2-mm Plasti...
20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shi...
HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be used toform a level shifted high...
QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the s...
20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shi...
HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be used toform a level shifted high...
QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the s...
...MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host...
...MOSFET Description The 20G04GD uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES N-CH...
AOD424G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Battery ......
AOD442G 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application Industrial and Motor Drive applications .....
...MOSFET General Description The AOD482/AOI482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for boost converters and synchro...
...MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host...