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Product Listing: FQD4P40TM MOSFET Power Electronics Features: - MOSFET technology, enabling low RDS(on) and low gate charge - Low output capacitance and fast switching speed - Low threshold voltage - High power...
FQD2N90TM MOSFET Power Electronics Product Description: The FQD2N90TM MOSFET Power Electronics is a high-power, high-performance device ideal for a wide range of applications. This device features low on-resist...
...MOSFET Power Electronics Product Features: • Logic level gate drive • Low gate charge • Low on-state resistance • Fast switching • Avalanche rated Specifications: •VDSS: 20V •VGS: ±20V •ID: 28A •RDS(on): 0.0...
... of 0.6 ohms, it is an ideal choice for high-current switching applications. It also features a low input capacitance that allows for fast switching speeds and improved performance. This device is available ...
...MOSFET Power Electronics Description: The NTR4501NT1G is a MOSFET power electronics device capable of operating at high frequencies and providing reliable and efficient power conversion. It features low on-r...
2N7002K MOSFET Power Electronics Product Features: - N-Channel Enhancement Mode MOSFET - High Speed Switching - Low On Resistance and Low Input Capacitance - Low Voltage Operation - High Current Capability Spec...
...MOSFET Power Electronics Overview: The AO3481 is a high performance, low on-resistance, N-channel MOSFET power electronics device. It is designed to provide the power and performance needed for switching and...
SIHP22N60E-GE3 MOSFET Power Electronics High Performance High Efficiency Switching Solutions FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (I...
IRFB5615PBF MOSFET High Power High Performance Switching Solution Product Name: IRFB5615PBF Type: MOSFET Vds: 55V Id: 15A Rds(on): 0.100 Ohm Vgs: 20V Qg: 3.8 nC Package: TO-220AB Configuration: N-Channel Why b...
...MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple D...
...MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling ...
Product Description: High Voltage MOSFET High Voltage MOSFETs are embedded FRD HV MOSFETs offering ultra-high voltage ratings and great heat dissipation, with low on-resistance and MOSFET technology. This type ...
... current 100A. Infrequent switching circuits, conversion and control circuits can also directly control small capacity motors or be used for main control or electricity meters. The switch is widely used in c...
... current 100A. Infrequent switching circuits, conversion and control circuits can also directly control small capacity motors or be used for main control or electricity meters. The switch is widely used in c...
...SWITCHING NPN POWER TRANSISTOR switching power mosfet ■ IMPROVED SPECIFICATION: - LOWER LEAKAGECURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE ■ HIGH VOLTAGE CAPABILI...
...Mosfet FDS6676AS Intregrated Circuit Computer Chip Board 30V N-Channel PowerTrench FDS6676AS Electronic Components Original Stock General Description The FDS6676AS is designed to replace a single SO-8 MOSFET...
... Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C...
... Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred fo...
...MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead-Free Description Fi...
... from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design...