| Sign In | Join Free | My burrillandco.com |
|
... • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Power Switching • Hard Switched and High Frequency Circuits Benefits • Improved Gate, Avalanche and Dynamic dV...
... Power Mosfet Transistor 130 A Continuous Drain Current Applications ►DC Motor Drive ►High Efficiency Synchronous Rectification in SMPS ►Uninterruptible Power Supply ►High Speed Power Switching Hard Switched...
... Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced ......
...channel MOS-FET switching power mosfet > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated >...
high frequency switch electrowinning rectifier 20v 1000a Specification SPECIFICATIONS FOR GKD15-1500CVC Input AC 380V±10% 3phase 50/60Hz Output DC Volt 0~20V Adjustable Current 0~1000A Adjustable Power 18KW Eff...
...MOSFET Power Electronics High Performance and Reliability Description: IRFB3006PBF MOSFET is a N-Channel MOSFET with a maximum drain source voltage of 100V and a continuous drain current of 30A. It has a max...
... N-Channel MOSFET designed for use in high power switching applications. This device offers a 200V drain-source voltage rating and a maximum drain current of 69A. It also provides a low on-resistance of 55mO...
...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench tec...
SUD25N06-45L N-Channel 60-V (D-S), 175C MOSFET, Logic Level switching power mosfet low power mosfet Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Pulsed ......
...MOSFET General Description These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance ...
...MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • Very Small SOIC Package • Low Profile (<1.1mm) • Available in Tape & Reel • Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching......
...MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugge...
Mosfet Power Transistor DMHT3006LFJ-13 V-DFN5045-12 Mosfet BVDSS: 25V-30V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making i...
STP110N8F6 Transistors MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. ...
...Mosfet Power Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge...
... switching This device is specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transi...
... and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devic...
... and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devic...
Mosfet Power Transistor DMHT3006LFJ-13 V-DFN5045-12 Mosfet BVDSS: 25V-30V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making i...
STP110N8F6 Transistors MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. ...