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...MOSFET Power Electronics Product Description: This MOSFET Power Electronics device from IRFI is designed for applications requiring high-efficiency power management. It features low on-state resistance and f...
Introducing the IRFP9140NPBF MOSFET Power Electronics from Infineon Technologies. This advanced MOSFET device is designed to provide superior performance in both switching and linear applications. The IRFP9140N...
Product Listing: IRFL4315TRPBF MOSFET Power Electronics This MOSFET power electronics device is designed to provide efficient power conversion and switch between high-power applications. It features a low on-re...
... • Halogen-free • RoHS compliant • 100% avalanche tested • Lead-free Application: • DC/DC Converters • General-Purpose Switching • Uninterruptible Power Supply • Power Factor Correction • Solid State Lightin...
Product Listing: Name: FDMS2D5N08C MOSFET Power Electronics Features: N-channel Power MOSFET Low on-resistance Ultra-low gate charge Low input and output capacitances Low threshold voltage Fast swit...
...MOSFET Power Electronics The NVD5117PLT4G-VF01 is a MOSFET Power Electronics device with a low on-resistance and fast switching speed. It is a high-power, low-voltage device for use in automotive, industrial...
.... This device has a Drain-Source voltage rating of 800V and a maximum drain current rating of 40A. It also has a low on-state resistance and fast switching speed. Features: • 800V Drain-Source Voltage • 40A ...
...MOSFET Power Electronics Product Description: The NTD24N06LT4G is a low-side MOSFET power electronics device designed to switch power in a wide range of applications. This device is rated for a maximum curre...
... MOSFET Power Electronics The FDD6637 MOSFET is a high performance power electronic device that provides reliable and efficient operation in demanding applications. The FDD6637 is a standard TO-220 package a...
Product Listing: FQD4P40TM MOSFET Power Electronics Features: - MOSFET technology, enabling low RDS(on) and low gate charge - Low output capacitance and fast switching speed - Low threshold voltage - High power...
FQD2N90TM MOSFET Power Electronics Product Description: The FQD2N90TM MOSFET Power Electronics is a high-power, high-performance device ideal for a wide range of applications. This device features low on-resist...
...MOSFET Power Electronics Product Features: • Logic level gate drive • Low gate charge • Low on-state resistance • Fast switching • Avalanche rated Specifications: •VDSS: 20V •VGS: ±20V •ID: 28A •RDS(on): 0.0...
... of 0.6 ohms, it is an ideal choice for high-current switching applications. It also features a low input capacitance that allows for fast switching speeds and improved performance. This device is available ...
2N7002K MOSFET Power Electronics Product Features: - N-Channel Enhancement Mode MOSFET - High Speed Switching - Low On Resistance and Low Input Capacitance - Low Voltage Operation - High Current Capability Spec...
...MOSFET Power Electronics Overview: The AO3481 is a high performance, low on-resistance, N-channel MOSFET power electronics device. It is designed to provide the power and performance needed for switching and...
SIHP22N60E-GE3 MOSFET Power Electronics High Performance High Efficiency Switching Solutions FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (I...
IRFB5615PBF MOSFET High Power High Performance Switching Solution Product Name: IRFB5615PBF Type: MOSFET Vds: 55V Id: 15A Rds(on): 0.100 Ohm Vgs: 20V Qg: 3.8 nC Package: TO-220AB Configuration: N-Channel Why b...
...MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple D...
...MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling ...
...Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized...