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Fairchild FCP190N60-GF102 N-Channel MOSFET Power Electronics Transistor for High-Speed Switching Applications Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) Drive ......
FDPF18N20FT MOSFET Power Electronics – High Performance Switching Low On-Resistance and High Temperature Operation Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C ......
FCPF1300N80Z MOSFET Power Electronics - High Performance Low Loss Power Switching Solution for Industrial Applications Drain to Source Voltage (Vdss) 800 V Current - Continuous Drain (Id) @ 25°C 4A (Tc) ......
FDN342P MOSFET Power Electronics: High Power Low Loss High Efficiency Switching Solutions Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (......
HUF75645S3ST N-Channel MOSFET Power Electronics for High-Performance Switching Applications Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25C 75A (Tc) Drive Voltage (Max Rds On, Min Rd...
IRFB4510PBF MOSFET Power Electronics Product Features: Low On-Resistance Low Gate Charge Fast Switching Capabilities 3.3V Drive Voltage High Current and Power Handling RoHS Compliant Halogen-Free ...
NTTFS4C10NTAG 8-WDFN MOSFET Power Electronics – Ideal for High-Power Switching Applications N-Channel 30 V 8.2A (Ta) 44A (Tc) 790mW (Ta) Drain to Source Voltage (Vdss) 30 V Current - ......
...MOSFET High Current Low On Resistance High Efficiency Features: - 500V Drain-Source Voltage - 7.7A Continuous Drain Current (Tc) - 80W Total Power Dissipation (Tc=25°C) - Low On-Resistance RDS(on) = 0.18Ω - ...
IRFR3710ZTRLPBF Power MOSFET Product Features: Ideal for Automotive and High Efficiency Applications Low Gate Charge Low RDS(on) High Speed Switching 175C Operating Temperature 100% UIL Tested Ro...
...MOSFET from Fairchild Semiconductor. It is designed to handle high power applications and can operate at up to 100V. It features low on-resistance of 0.7 ohms, which allows for higher efficiency power conver...
Product Listing: BVSS84LT1G MOSFET Features: - N-Channel enhancement mode - Low gate charge - Fast switching - Low on-state resistance - RoHS compliant Specifications: - Drain Current: 8.4A - Drain-Source Volta...
...Tests adopts the sine pulse width modulation technology of digital power amplifier.Its working principle is: using the MOSFET field-effect’s high frequency switch power, through digital circuit to amplify an...
... A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/......
...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) H...
... N&P-Ch MOSFET Description The WST3078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switc...
... Halogen Free and Green Devices Available (RoHS Compliant) High Current Transistor Applications Power Management for DC/DC Switching application Ordering and Marking Information S 1904 YYXXXJWW G Package Cod...
... N&P-Ch MOSFET Description The WST3078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switc...
... Halogen Free and Green Devices Available (RoHS Compliant) High Current Transistor Applications Power Management for DC/DC Switching application Ordering and Marking Information S 1904 YYXXXJWW G Package Cod...
...% 1phase 50/60Hz Output DC Volt 0~12V Adjustable Current 0~50A Adjustable Power 0.6KW Efficiency >85% Switching Frequency 20KHz Protection Short circuit protection Overheating...
...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......