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FQD2N90TM MOSFET Power Electronics Product Description: The FQD2N90TM MOSFET Power Electronics is a high-power, high-performance device ideal for a wide range of applications. This device features low on-resist...
FDS6673BZ N-Channel MOSFET Power Electronics Product Features: Logic level gate drive Low gate charge Low on-state resistance Fast switching Avalanche rated Specifications: VDSS: 20V VGS: 20V ID: ...
FDMS8820 MOSFET Power Electronics The FDMS8820 is an advanced MOSFET power electronics device that offers improved performance and reliability for a wide range of switching applications. This device is designed...
NTTFS5116PLTAG MOSFET Power Electronics The NTTFS5116PLTAG MOSFET Power Electronics is a high-performance power semiconductor device designed for use in a variety of applications. It features a low on-state res...
NTD3055L104T4G - N-Channel 30V 55A MOSFET Power Electronics Product Description: The NTD3055L104T4G is a high performance N-Channel MOSFET power electronics device, designed for use in power switching applicati...
FDN86265P is an advanced Power MOSFET from Fairchild Semiconductor. It is designed to provide superior performance in a wide range of applications. This MOSFET offers excellent switching performance and low on-...
FDC640P MOSFET Power Electronics The FDC640P is a power MOSFET device designed to provide efficient and reliable power conversion in a wide range of applications. With a maximum on-state resistance of 0.6 ohms,...
ISO9001.pdf Application: IPD80R1K4P7 is an N-channel MOSFET transistor commonly used in high-efficiency DC-DC converters and power supply applications. It can operate at low voltage and has low resistance and h...
ISO9001.pdf IPD082N10N3 is an N channel MOSFET transistor. The following are its applications, conclusions, and parameters: Application: Used as a high-voltage and high-power load switch Used as a switch for co...
2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−......
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an ex...
...Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may b...
...MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LN2306LT1G Products Description: 1. Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R 2. Diodes and Rectifiers N-channel 30V 5.8A 3. High Density Cell Design For Ultra Lo...
...MOSFET General features Type VDSS RDS(on) ID STD65NF06 60V <14mΩ 60A STP65NF06 60V <14mΩ 60A ■ Standard level gate drive ■ 100% avalanche tested Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor......
Internally Clamped, Current Limited NChannel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gatetosource clamp for ESD protection and...
STP4NK60Z - STP4NK60ZFP STB4NK60Z-STD4NK60Z-STD4NK60Z-1 N-CHANNEL 600V - 1.76 - 4A TO-220/FP/DPAK/IPAK/D2PAK Zener-Protected SuperMESHTMPower MOSFET TYPICAL RDS(on) = 1.76 EXTREMELY HIGH dv/dt CAPABILITY...
... DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresist...
TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current Logic Input Will Withstand Negative Swing Up to 5V ESD Protected ..............
Product Overview This device is designed for general purpose amplifier applications. It is a dual transistor (NPN+NPN) housed in an SOT-363 package.Product Attributes Brand: Not specified Origin: Not specified ...
Product Listing: IRF7389TRPBF N-Channel Power MOSFET Technology: N-Channel Drain-Source Voltage: 100V Current - Continuous Drain (Id) @ 25C: -40A Rds On (Max) @ Id, Vgs: 0.35 ohm @ -40A, 10V Power - ...