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Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier Polar3TM HiperFETTM IXFT60N50P3 VDSS = 500V Power MOSFET IXFQ60N50P3 I D25 = 60A IXFH60N50P3 RDS(on) ≤ 100mΩ N-Channel Enhancement Mode Ava...
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Amplifier Applications Low noise : NF = 3dB (typ.) RG = 100 , VCE = 6 V, IC = 100 A, f = 1 kHz : NF = 0.5dB (typ.) RG = 1...
MOSFET Transistor AP2N1K2EN1 Original Electronic Component / IC Chips Description AP2N1K2E series are from Advanced Power innovated design and silicon process ......
IRFP240PBF 200V 20A 0.18Ohm Rated Power MOSFET Transistor TO - 247 Dynamic DV/DT Rating Repetitive Avalanche HEXFETO Power MOSFET ●Dynamic dv/dt Rating ●Repetitive Avalanche Rated ●Isolated Central Mounting Hol...
IRF540NSTRLPBF HEXFE Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID...
... operatlng ar9g ●improved high temperature rellabllty ●TO~3 package (High voltage} Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style:...
...MOSFET Transistors Si TO-252-3 original in stock Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circui...
MOSFET Transistor AP2N1K2EN1 Original Electronic Component / IC Chips Description AP2N1K2E series are from Advanced Power innovated design and silicon process ......
Product Detail Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25C 115mA (Ta) Drive Voltage (M...
Product Detail Series TrenchFET Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25C 6A (Tc) D...
Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25C 72A (Tc) Drive Voltage (Max Rds On,...
Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25C 195A (Tc) Drive Voltage (Max Rds On,...
Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25C 7.5A (Ta) Drive Voltage (Max Rds On...
...Mosfet Transistor Sak-tc387qp Sak-tc387qp-160f300s Ae Tc387qp-160f300s Electronics Components A MOSFET (metal-oxide-semiconductor field-effect transistor) is a type of transistor that is commonly used in ele...
SiC Trench MOSFET IMBF170R1K0M1 N-Channel MOSFETs Transistors TO-263-8 1700V Product Description Of IMBF170R1K0M1 IMBF170R1K0M1 is CoolSiC™ 1700V SiC Trench MOSFET Silicon Carbide MOSFET Transistors, Enabling ...
New Original Stock Good Price Electronic Components Integrated Circuits Mosfet Transistors MAIN Product picture show: OUR CERTIFICTAE WE HAVE SUFFICENT STOCK PAYMENT AND SHIPPING FAQ 1. Q: What is your products...
TOSHIBA Photocoupler GaAs Ired&PhotoTransistor TLP733, TLP734 Office Machine Household Use Equipment Solid State Relay Switching Power Supply The TOSHIBA TLP733 and TLP734 consist of a phototransistor optical...
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DM...
NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, ...
PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted D...