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... Voltage: ±20 V • Mounting Type: Through Hole • Package/Case: TO-220-3 • Operating Temperature Range: -55°C to 175°C • Transistor Polarity: N-Channel • Maximum Power Dissipation: 70 W Why buy from us >>> Fas...
BSC060N10NS3G MOSFET Power Electronics High-Performance Low-Power Consumption Transistor for Industrial Applications IRF6217TRPBF - N-Channel MOSFET Transistor Parameters: VDS (Max) = 100V VGS (Max) = ±20V ID (...
...RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET tr...
...MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple D...
...MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling ...
... in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dr...
...transistor For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to...
...MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible AP...
LT1086CM-3.3 Power Mosfet Transistor Electronics ICs Chip Integarted Circuts 1.5A Low Dropout Positive Regulators Adjustable and Fixed 2.85V, 3.3V, 3.6V, ......
AP50P03NF P-Channel Advanced Power MOSFET field effect high voltage transistor AP50P03NF.pdf Description The AP50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operati...
AP60N03DF N-Channel Advanced Power MOSFET power field effect transistor AP60N03DF.pdf Description The AP60N03DF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with...
... and a high-cell density cell design to provide improved RDS(ON). The TO-220 package provides excellent thermal performance and ruggedness. This MOSFET transistor is suitable for...
...RDS (on) of 0.0015Ω, an ID of 60A and an avalanche energy rating of 8mJ. Key Features: • N-Channel Power MOSFET • RDS (on) of 0.0015Ω • ID of 60A • Avalanche Energy Rating of 8mJ • RoHS Compliant • Pb-Free W...
...MOSFET Power Electronics High Performanc Fast Switching Low Loss Power Conversion Product Listing: Product Name: IRLB3813PBF MOSFET Transistor Description: The IRLB3813PBF is a N-Channel Power MOSFET transis...
Product Range IPB017N10N5 Infineon Field Effect Transistor Semiconductors Power Mosfet Transistors MOSFET N-channel 600 V, 0.175 Ohm typ 18 A MDmesh DM2 Power MOSFET in D2PAK package App Characteristics Ideal f...
... high-performance and efficiency in power management applications. This versatile transistor is perfect for a wide range of applications, including power supplies, LED lighting, motor controls, and more. Wit...
MJD122G Complementary Darlington Power Transistor switching power mosfet low power mosfet Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Ap...
2SB1316TL Power Transistor low power mosfet switching power mosfet] Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Comple...
AO4612 MOSFET Power Electronics - Optimized For High Efficiency And Reliability AO4612 - Power MOSFET Transistor The AO4612 is a high-performance, low-voltage, N-channel MOSFET transistor. It is designed to off...
BLF574 RF Mosfet 50V 1 A 225MHz 26.5dB 400W SOT539A Manufacturer: Ampleon Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 42 A Vds - Drain-So...