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Total 24607 products for mosfet transistor pdf Manufacture & Suppliers

Custom Made Mosfet Power Transistor Low ON Resistance AP15N10D

...Mosfet Power Transistor Low ON Resistance AP15N10D Mosfet Power Transistor Applications Power MOSEFET technology is applicable to many types of circuit. Applications include: Linear power supplies Switching ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AP25N10X Mosfet Power Transistor 25A 100V TO-252 SOP-8 DC-DC Converters

... to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transistor Features VDS =100V I D =25 A RDS(ON) < ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Switch Mode Power Supplies SMPS Mosfet Power Transistor 50A 100V

...Mosfet Power Transistor 50A 100V Mosfet Power Transistor Description: The AP50N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Solar Inverters 6A 20V Mosfet Power Transistor With High Switching Speed

...Mosfet Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltag...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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NTTFS3A08PZTAG Transistor Mosfet P Channel 20V 9A 8WDFN

...Transistors FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFE...

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Guangdong,China

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IRF3205PBF Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET

...Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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High Performance Mosfet Power Transistor With Extreme High Cell Density

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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High Performance Mosfet Power Transistor With Extreme High Cell Density

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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High Performance Mosfet Power Transistor With Extreme High Cell Density

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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High Performance Mosfet Power Transistor With Extreme High Cell Density

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Mosfet MOSFT Transistor IC KIA4N65 4N65 650V TO-220F MOSFET Electronic Component Integrated Circuits

Product Description Technology MOSFET Voltage 650V Mounting Type Through Hole Package TO-220F Yonlanda Skype: qyt-yolanda1 Email: yonlandasong(at)quanyuantong.net...

Shenzhen Quanyuantong Electronics Co., Ltd.

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High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK

... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK

... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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Multipurpose Transistor IC Chip FQPF15N60C MOSFET For Electronics

Powerful FQPF15N60C MOSFET for Effective Electronics Optimize Your Device Performance with FQPF15N60C MOSFET Are you looking for a high-performance MOSFET for your next electronics project? Look no further than...

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
China

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SIHP12N50C-E3 MOSFET Power Electronics High Performance High Reliability Switching Solution

...-E3 MOSFET Power Electronics High Performance High Reliability Switching Solution Product Description: SIHP12N50C-E3 MOSFET Transistor is a high voltage N-channel MOSFET with low on-resistance and fast switc...

Shenzhen Sai Collie Technology Co., Ltd.
China

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IRFR4620TRLPBF MOSFET High Performance Power Electronics Solution For Maximum Efficiency

...MOSFET High Performance Power Electronics Solution for Maximum Efficiency Description: The IRFR4620TRLPBF is a N-Channel MOSFET transistor with a rated drain current of 10A and a maximum drain-source voltage...

Shenzhen Sai Collie Technology Co., Ltd.
China

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MJL21193 MJL21194 power mosfet module Silicon Power Transistors

Silicon Power Transistors PNP MJL21193 NPN MJL21194 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically des...

Anterwell Technology Ltd.
Guangdong,China

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BCX56 Power Mosfet IC Transistor NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power ...

Anterwell Technology Ltd.
Guangdong,China

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High Precision 3N80 3A 800V Field Effect Transistor / Power Mosfet N - Channel TO-220

... Low reverse transfer capacitance Fast switching capability Avalanche energy specified General description of insulated gate bipolar transistor The 3N80 provide excellent RDS(ON)low gate charge and...

Shenzhen Canyi Technology Co., Ltd.
Guangdong

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NCE N Channel Enhancement Mode Power MOSFET NCE30H10K TO-252 package

...mosfet power transistor NPN MOSFET A09T n channel transistor N channel transistor features VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capabilityMosfet power transistor......

Shenzhen Canyi Technology Co., Ltd.
Guangdong

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