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...Transistor High Frequency N Channel Mos Field Effect Transistor types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed and addressed by differen...
...low switch on resistance enables high levels of efficiency to be attained. There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics a...
...Transistors MOSFET Through Hole . Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 t...
Product Description Package SOT-252 Date Code 18+ Packing Tape and reel/ Tube Stock Enough Stock Supplier Quanyuantong Electronics Co.,ltd Lead time 48hours Quality Warranty 360 days Yonlanda Skype: qyt-yolanda...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
TK5A90E,S4X switching voltage regulators 4.5A 900V 3.1Ohms N-Channel Mosfet Applications Switching Voltage Regulators Description Toshiba -MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combinin...
IRF8010PBF MOSFET Power Transistor High Speed Switching for High Power Applications Product Listing: IRF8010PBF MOSFET Features: 100V Drain-Source Breakdown Voltage 100V Maximum Drain-Source Voltage 500mA...
...MOSFET Parameters: - Drain to Source Voltage (Vds): 500V - Drain Current (Id): 4.4A - Gate to Source Voltage (Vgs): +/- 20V - Drain to Gate Voltage (Vdg): 500V - Power Dissipation (Pd): 20W - Operating Tempe...
SI2305CDS-T1-GE3 N-Channel MOSFET Power Transistor for High-Speed Switching Applications Product Features: N-Channel MOSFET 30V drain-source voltage 0.005 maximum on-state resistance 1.5A (Tc) continuo...
BSZ0909NS MOSFET Power Electronics High Performance High-Efficiency Switching Transistors Features: - N-Channel MOSFET - Voltage: 100V - Drain Current: 6A - Rds(on): 0.36ohm - Package: TO-252 - Maximum Power Di...
IRF6638TRPBF MOSFET Power Electronic High Current Low Resistance Switching Transistor Features: • N-Channel MOSFET • Logic Level Gate Drive • 175°C Operating Temperature • +-20V Gate-Source Voltage • 30V Drain-...
2N7002ET1G MOSFET Power Electronics TO-236-3 Transistor High Performance Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°...
NTR4101PT1G MOSFET Power Electronics Transistor TO-236-3 Package Enhancement Mode FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 1....
NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain ...
NVR5198NLT1G MOSFET Power Electronics TO-236-3 Package N-Channel Enhancement Mode Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id...
FDD2572 MOSFET Power Electronics TO-252-3 Transistor High Quality Reliability Low On Resistance Wide Operating Voltage FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Cur...