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... RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES ● Low Input Capacitance ● Fast Switching Speed APPLICATIONS ● Power Management ● DC...
... high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or ......
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...
JY12M N and P Channel 30V MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY12M is the N and P Channel logic enhancement mode power field transistors are produced using high cell density DMOS trench techno...
...-V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility.This allows for N-channel MOSFET control in halfbridge, full-bridge, two-switch forward, and acti...
...CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and hav...
...CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and hav...
IR2153STRPBF IR2153S Half-Bridge Gate Driver IC RC Input Circuit 8-SOIC Driven Configuration Half-Bridge Channel Type Synchronous Number of Drivers 2 Gate Type N-Channel MOSFET Voltage - Supply 10V ~ 15.6V Logi...
IR2110PBF Marking IR2110 Half-Bridge Gate Driver IC Non-Inverting 14-DIP Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 3.3V ~ 20...
IR2153STRPBF IR2153S Half-Bridge Gate Driver IC RC Input Circuit 8-SOIC Driven Configuration Half-Bridge Channel Type Synchronous Number of Drivers 2 Gate Type N-Channel MOSFET Voltage - Supply 10V ~ 15.6V Logi...
HIP4082IBZ HIP4082IB Half-Bridge Gate Driver IC Non-Inverting 16-SOIC Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 4 Gate Type N-Channel MOSFET Voltage - Supply 8.5V ~ 15V Logic V...
IR2110PBF Marking IR2110 Half-Bridge Gate Driver IC Non-Inverting 14-DIP Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 3.3V ~ 20...
...channels DESCRIPTION The JY213L is a high-speed 3-phase gate driver for power MOSFET and IGBT devices with three independent high and low side referenced output channels. Built-in dead time protection and sh...
... level of the TLE6284G can be adjusted by external resistors or even disabled. The pin outs are different as well. Applications: • Compatible to very low ohmic normal level input N-Channel MOSFETs • PWM – DI...
Product Description: High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularit...
... packages. Specifically targeted for PWM motor control and UPS applications, bridge based designs are made simple and flexible with the HIP4082 H-bridge driver. With operation up to 80V, the device is best s...