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Polycrystalline Silicon Wafer

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Total 2349 products for polycrystalline silicon wafer Manufacture & Suppliers

320W 36V Polycrystalline Silicon Solar Panels / Multicrystalline Silicon Solar Cells

... and more expensive process of creating a single crystal, molten silicon is just put into a cast and cooled with a seed crystal. By using the casting method, the crystal surrounding the seed isn’t uniform an...

ShenZhen URILIC ENERGY Technology Co.,Ltd
Guangdong,China

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2 Inch Silicon Wafer FZ P Type Boron Doped Orientation 100 Prime Grade 2"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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3 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 3"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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3 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 3"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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4 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 4"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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8 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 111 Prime Grade 8"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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8 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 111 Prime Grade 8"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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12 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 12"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

Add to cart
8 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 100 Prime Grade 8"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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8 Inch Silicon Wafer FZ Intrinsic Undoped Orientation 100 Prime Grade 8"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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12 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 111 Prime Grade 12"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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4 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 111 Prime Grade 4"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

Add to cart
3 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 100 Prime Grade 3"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

Add to cart
2 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 111 Prime Grade 2"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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12" Dummy Grade / Mechanical Grade Silicon Wafer DSP Thickness 650-700/700-750/750μm No Scratch Films Etch Patterns

... silicon substrate to compound semiconductor, PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon s...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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6 Inch Silicon Wafer CZ N Type Antimony Doped Orientation 100 Ultra Thickness 290±20um Prime 6"

...Silicon Wafer CZ N Type Antimony Doped Orientation 100 Ultra Thickness 290±20um Prime 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to compound sem...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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8 Inch Silicon Wafer CZ P Type Phosphorus Doped Orientation 100 Prime Grade 8"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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6 Inch CZ Prime Silicon Wafer With One Side Sputtering Cr / Au Layer Thickness 10nm/50nm 6"

...Silicon Wafer With One Side Sputtering Cr / Au Layer Thickness 10nm/50nm 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to compound semiconductor, P...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

Add to cart
6 Inch Silicon Wafer CZ P Type Boron Doped Orientation 111 Prime Grade 6"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

Add to cart
6 Inch Silicon Wafer CZ P Type Boron Doped Orientation 100 Prime Grade 6"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

Active Member

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