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...Ω • Gate-Source Voltage: ±20V • Continuous Drain Current: 11A • Pulsed Drain Current: 22A • Power Dissipation: 17.3W • Operating Temperature Range: -55°C to +150°C • Mounting Style: SMD/SMT • Package/Case: T...
...designed for applications such as DC/DC converters, AC/DC rectifiers and power management. With an Rds(on) of 0.28 Ohm and a package size of 2.8mm x 3.3mm x 0.9mm, this MOSFET is optimized for a low on-resis...
IPW60R070C6 High-Performance MOSFET Power Electronics for Optimal Efficiency and Reliability Product Description: The IPW60R070C6 is a N-Channel enhancement mode power MOSFET. This device is designed to withsta...
IPW60R045CP High Performance MOSFET Power Electronics for Optimal Efficiency IPW60R045CP - N-Channel MOSFET Parameters: Drain-Source Voltage: 60V Continuous Drain Current: 45A Power Dissipation: 197W Ga...
IPW60R070P6 MOSFET Power Electronics High-Performance High-Efficiency Low-Voltage Switching Solution Product Description: The IPW60R070P6 is an N-channel MOSFET, designed for use in applications such as power m...
IPW60R099C6 MOSFET Power Electronics - High Quality High Current Low On-Resistance IPW60R099C6 N-Channel MOSFET Product Parameters: • Drain-Source Voltage (VDS): 60V • Continuous Drain Current (ID): 16A • RDS(O...
... of applications, including load switching and DC-DC conversion. Features: • Low On-Resistance: the on-resistance of this device is low, allowing for efficient power conversion and energy savings. •...
... On-Resistance (RDS(ON)): 0.8 Ohm • Gate-Source Voltage (VGS): -4.5V to -5.5V • Continuous Drain Current (ID): 5.2A • Maximum Power Dissipation (PD):...
...-Source Voltage: -20V - Gate-Source Voltage: -6V - Drain Current (continuous): -2A - Drain Current (pulsed): -5A - Power Dissipation: 1.5W Operating Temperature Range: -55°C to +150°C...
... (Vgs): ±20V • Continuous Drain Current (Id): 6A • RDS(on): 0.043Ω • Pulsed Drain Current (Idm): 10A • Maximum Power Dissipation (Pd): 8W • Operating Temperature Range (Tj): -55°C to 150°C •...
...Current - Continuous Drain (Id) @ 25°C: 11A • Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 25V • Power - Max: 500mW • Operating Temperature: -55°C to 150°C • Mounting Type: Surface Mount • Package / Case: T...
... N-Channel MOSFET designed for use in high power switching applications. This device offers a 200V drain-source voltage rating and a maximum drain current of 69A. It also provides a low on-......
IRF9317TRPBF MOSFET Power Electronics: High Efficiency Low Loss High-Speed Switching Description: The IRF9317TRPBF is a 100V N-Channel Power MOSFET designed to provide high performance in a small packages. This...
...Power Electronics SC-75 High Performance Switching Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 154mA (Tj) Drive Volt...
... power supply designs. This MOSFET features a low on-resistance of 0.037 Ω, a low gate charge of 16 nC, and a high peak current ......
...Power Electronics 4.4 Amps 20 Volts P−Channel TSOP−6 Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, ...
... 12 nC @ 4.5 V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 10 V FET Feature - Power Dissipation (Max) 1.6W (Ta)...
...Power Electronics TO-236-3 Transistor High Speed Switching Linear Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 11...
...Power Electronics Module Single P-Channel WDFN8 -100 V 120 m -13 A Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 15A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 1...
...Power Electronics P-Channel -5.2 A -30 V Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V ...