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... nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 24 V FET Feature - Power Dissipation (Max) 840mW (Ta)...
... 20 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 16 V FET Feature - Power Dissipation (Max) 8.3W (Ta)...
...Power Electronics SC-75 SMD High Performance Voltage Gate Charge RDS Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2...
...Power Electronics N-Channel Enhancement Mode SC-75 600V 4.3A 17.3mΩ RDS FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 154mA (Tj...
... nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1255 pF @ 15 V FET Feature - Power Dissipation (Max)...
... Power Electronics The FDS2582 is an N-Channel Enhancement Mode MOSFET designed for low voltage, high current switching applications. It has an excellent RDS(on) rating of only 5 mΩ, providing superior effic...
...Power Electronics N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Dr...
...Power Electronics Transistor for High-Speed Switching Applications Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Ma...
...Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50 V Current - Continuous Drain (Id) @ 25°C 220...
...Power Electronics TO-236-3 N-Channel Enhancement Mode Field Effect Transistor High Performance FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50 V Current - Continuous Drai...
...Power Electronics TO-236-3 Package N-Channel Enhancement Mode Field Effect Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ ...
...Power Electronics – High Performance Switching Low On-Resistance and High Temperature Operation Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On,...
FDPF18N20FT MOSFET Power Electronics High Performance Switching Low On-Resistance and High Temperature Operation FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250 V Current...
... nC @ 20 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3790 pF @ 25 V FET Feature - Power Dissipation (Max) 310W (Tc)...
...Power Electronics High Efficiency High Frequency Switching and Low Heat Dissipation Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 38A (Ta) Drive Voltage (Max Rds On, Min Rds On) ...
Product Name: NTBGS004N10G MOSFET Power Electronics Description: The NTBGS004N10G is a high-speed power MOSFET designed for switching applications. It features a low on-resistance and low gate charge, allowing ...
...Power Electronics MMBF170 High-Performance Low-Voltage Switching for Heavy-Duty Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain ...
... 1.1 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 38 pF @ 25 V FET Feature - Power Dissipation (Max)...
...Power Electronics N-Channel Logic Level SOT-223 3.0 A 60 V Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs ...
... 15 nC @ 5 V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V FET Feature - Power Dissipation (Max) 1.3W (Ta)...