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...Power Electronics for Improved Efficiency Features: - 100V Drain-Source Breakdown Voltage - 175A Continuous Drain Current at 25°C - Low Gate Charge - Fast Switching - Low On-Resistance - 100% Avalanche Teste...
... Specifications: • Drain-Source Voltage: -100V • Drain Current-Continuous: -44A • Gate-Source Voltage: -20V • Power Dissipation: -68W • Operating Temperature Range: -55°C to +150°C • Mounting: -SMD • Package...
...Power Electronics High Voltage and High Current for Maximum Efficiency Product Description: The IRFPG50PBF is a 600V N-Channel MOSFET transistor with a maximum drain current of 27A. It has an incredibly low ...
...Rectifier. This MOSFET is designed with a low gate-source resistance, enabling low power loss and improved switching performance. The IRFS4410ZTRLPBF is made with a planar structure and uses a combination of...
...Power Electronics for High-Performance Applications Features: • Low on-resistance RDS(on): 7.8mΩ (max) • Fast switching • Low gate charge • 100% avalanche tested • RoHS compliant • Compliant to JEDEC for tar...
IRF3205STRLPBF High Performance MOSFET Power Electronics for Improved Reliability Efficiency Product Description: The IRF3205STRLPBF is a 55V N-Channel Power MOSFET with excellent switching performance and low ...
...Power Electronics Ideal for Automotive Applications Product Name: IRFR014TRLPBF MOSFET Description: This MOSFET is a N-Channel Enhancement Mode MOSFET designed for use in high frequency DC-DC converters and ...
...Power Electronics High Efficiency and Reliable Operation Product Description: The IRFL014TRPBF is a N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) from International Rectifier. It is a ...
... Charge - Low Input Capacitance - Fast Switching - Lead-Free and RoHS Compliant Application: - Motor Control - Automotive - Switching Power Supplies - Load Switching Why...
...-Performance MOSFET Power Electronics Solution for Maximum Efficiency Product Description: The IRF7480MTRPBF is a N-Channel MOSFET transistor designed for high-speed switching applications such as DC-DC conv...
...: 32A - RDS (on): 0.032 Ohm - Maximum Gate Threshold Voltage: 4V - Maximum Gate Source Voltage: ±20V - Maximum Power Dissipation: 91W - Operating Temperature: -55°C to 175°C Why buy from us >>> Fast / Safely...
IRFB3006PBF MOSFET Power Electronics High Performance and Reliability Description: IRFB3006PBF MOSFET is a N-Channel MOSFET with a maximum drain source voltage of 100V and a continuous drain current of 30A. It ...
... - Pulsed Drain Current (Idm): 60A - Rds(on): 0.019Ω - Input Capacitance (Ciss): 4200pF - Power Dissipation (Pd): 7.2W - Operating and Storage Temperature: -55℃ to +150℃ - Package: TO-220AB Why buy from us >...
IRFS3306TRLPBF MOSFET Power Electronics Transistor with Improved Performance and Reliability IRFS3306TRLPBF MOSFET Product Description: This MOSFET is a N-Channel enhancement mode, high-speed, power MOSFET devi...
IRFBG30PBF MOSFET High Performance Power Electronics for Optimal Efficiency Description: The IRFBG30PBF is a high-performance N-Channel enhancement-mode silicon gate power field-effect transistor designed for h...
...-Source Breakdown Voltage (Vds): 100V • Gate-Source Voltage (Vgs): +/- 20V • Continuous Drain Current (Id): 34A • Power Dissipation (Pd): 143W • Rds(on): 0.028 Ohm • Threshold Voltage (Vth): 4V • Operating T...
SI4401DDY-T1-GE3 MOSFET Power Electronics High Performance Low Voltage Switching Solution This MOSFET is a high-performance, low-voltage, low-power transistor designed for use in a wide range of applications. I...
IRL8113PBF MOSFET Power Electronics High Performance Low Voltage Low On Resistance Switch IRL8113PBF is a MOSFET designed for efficient and reliable power switching applications. It is optimized for low on-resi...
...resistance, low gate charge, and high power dissipation. It has a drain source voltage of 100 V and a drain current of 8 A. The package type is a TO-220-3. Parameters: • Drain Source Voltage: 100 V • ......
... drain-source voltage and +/-20V gate-source voltage. It has an on-resistance of 0.14 Ohms and is ideal for applications such as motor control, power switching and voltage regulation. Parameters: - Peak Drai...