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... nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 50 V FET Feature - Power Dissipation (Max) 79W (Tc)...
... nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 25 V FET Feature - Power Dissipation (Max) 3...
...Power Electronics Single N-Channel DFN5 DFNW5 40 V 2.3 m 140 A Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 29A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On...
...Power Electronics Single N-Channel DFN5 DFNW5 40 V 2.3 m 140 A Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 29A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On...
... nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 25 V FET Feature - Power Dissipation (Max)...
...Power Electronics Single N-Channel 8FL 30 V 3.6m 102 A Package 8-WDFN Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 22A (Ta), 102A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5...
... nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V FET Feature - Power Dissipation (Max) 55W (Tc)...
...Power Electronics Single N-Channel 40 V 0.67 m 370 A Package 5-DFN -60 V, -12 A, 135 Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 370A (Tc) Drive Voltage (Max Rds On, Min Rds On...
... 7.3 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 20 V FET Feature - Power Dissipation (Max) 3.5W (Ta), 28W (Tc)...
...Power Electronics for Advanced Applications N-Channel DUAL COOL 33 30 V 157 A 1.28 m Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 37A (Ta) Drive Voltage (Max Rds On, Min Rds On)...
...Power Electronics Single N-Channel SO-8 FL 30 V 46 A Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, V...
IRFU210PBF MOSFET Power Electronics High Performance Low Cost Switching Solution Description: The IRFU210PBF is a high-performance N-Channel MOSFET designed for use in power applications. It features a low gate...
... @ 100µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 25V Power - Max 21W Operating Temperature -55°C...
IRF9630PBF MOSFET Power Electronics High Performance Reliable Switching Product Description: The IRF9630PBF is a N-Channel Power MOSFET designed for high-side switching applications. It is designed to withstand...
...Power Electronics 30V N-Channel MOSFET Silicon Material Product Description: The IRFBE30PBF is a high-performance N-channel MOSFET designed for maximum efficiency in a wide range of applications. It featur...
IPA60R360P7SXKSA1 MOSFET Power Electronics High Voltage High Curren Fast Switching Description: The IPA60R360P7SXKSA1 N-Channel MOSFET from Infineon is a robust and reliable power MOSFET that offers a maximum d...
...) @ Id 2.4V @ 250µA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 5 V FET Feature - Power Dissipation (Max) 420mW (Ta) Operating Temperature -55°C ~ 150°C (TJ)...
... 2.5V @ 250µA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V FET Feature - Power Dissipation (Max) 225mW (Ta) Operating Temperature -55°C ~ 150°C (TJ)...
...-T1-GE3 MOSFET Product Description: The Si2307CDS-T1-GE3 MOSFET is a high-performance power MOSFET designed for use in a variety of power electronics applications. It features low on-resistance, fast switchi...
... Voltage: 100V • Continuous Drain Current: 34A • On-State Resistance: 0.0046 Ohm • Gate-Source Voltage: ±20V • Maximum Power Dissipation: 55W • Maximum Drain-Source Avalanche Voltage: 30V •...