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...power electronics device. This device is designed to provide high levels of efficiency and performance, making it ideal for a variety of applications. Features of the IRLMS6802TRPBF include: • Maximum Drain ...
IRF9520NPBF MOSFET Power Electronics Product Features: • N-Channel Enhancement Mode • Avalanche-Rated • Logic Level Gate Drive • Low Gate Charge • Low On-......
Product Listing: Name: IRFP7537PBF MOSFET Power Electronics Type: N-Channel Enhancement Mode Package: TO-247 Max Drain Source Voltage: 100V Max Drain Source Resistance: 0.......
... that require efficient, reliable, and high-power switching. Product Specifications: • Maximum Drain-Source Voltage: 100V • Maximum Gate-Source Voltage: 20V • Continuous Drain ......
IRFS7730TRL7PP MOSFET Power Electronics The IRFS7730TRL7PP is a high-performance power MOSFET from International Rectifier. Featuring an advanced high cell density process, this device delivers low on-resistanc...
... V • On-Resistance Rds(on): 0.14 Ohm • Input Capacitance (Ciss) @ Vds: 236 pF @ 10V • Operating Temperature: -55°C ~ 175°C • Power Dissipation: 4.8W •...
...Power Electronics Product Listing: • Type: NVR5124PLT1G • Package: TO-220 • Configuration: Single • Technology: MOSFET • Drain-Source Voltage (Vdss): 500V • Gate-Source Voltage (Vgs): ±20V • Drain Current (I...
... • Maximum Gate-Source Voltage: -8V • Maximum Drain Current: -14A • Maximum Drain-Source On-State Resistance: 3.8Ω • Maximum Power Dissipation @ 25°C:...
...-source on-resistance of 0.024Ω and a maximum drain current of 41A. It is also capable of sustaining a maximum avalanche energy of 37mJ. This MOSFET is suitable for power switching applications. Why buy from...
...Power Electronics N-Channel 500 V D²PAK TO-263 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On...
NTJS4151PT1G 6-TSSOP MOSFET Power Electronics Power Single P-Channel Trench SC-88 -20 V -4.2 A FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source ......
MOSFET Power Electronics SQ2315ES-T1_BE3 High Performance Low Voltage NChannel Product Parameters: Drain-Source Voltage (Vdss): 600V Id @ 25C: 23A Rds(on) @ 25C: 0.028ohm Gate-Source Voltage (Vgs): 2...
IRF1404PBF MOSFET High Performance Power Electronics for Efficient Switching Features: Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Low Input/Output Leakage High Speed Switching ...
IRF3710ZPBF MOSFET Power Electronics High Performance Low On Resistance Fast Switching Parameters: - N-Channel MOSFET - Maximum Drain Source Voltage: 100V - Drain Source On Resistance: 0.040 Ohm - Gate Threshol...
IRF7341TRPBF MOSFET Power Electronics High Performance High Reliability Switching Device Product Listing: IRF7341TRPBF MOSFET Description: The IRF7341TRPBF is a 30V single-N-channel ......
SI7658ADP-T1-GE3 MOSFET Power Electronics High Quality High Efficiency and Reliability Product Description: The SI7658ADP-T1-GE3 is a N-Channel MOSFET with an embedded gate protection ......
IRFU120NPBF MOSFET Power Electronics High Performance and Reliability for Demanding Applications Description: The IRFU120NPBF N-Channel MOSFET is a high performance, low voltage, low on-state resistance, fast s...
IR2108STRPBF MOSFET Power Electronics High Performance Energy Efficient Switching Device for Automotive Product Description: The IR2108STRPBF is a high-performance, low-voltage MOSFET from International Rectifi...
IRF3703PBF MOSFET Power Electronics High Efficiency High Voltage Low On Resistance The IRF3703PBF is a high performance, low on-resistance, N-channel MOSFET from International Rectifier. It ......
IRF1018EPBF MOSFET High Performance Power Electronics for Maximum Efficiency Product Description: The IRF1018EPBF is a N-channel enhancement mode MOSFET designed for high current switching applications. It is f...