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...Power Electronics SC-75 High Performance Switching Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 154mA (Tj) Drive Volt...
... power supply designs. This MOSFET features a low on-resistance of 0.037 Ω, a low gate charge of 16 nC, and a high peak current ......
...Power Electronics 4.4 Amps 20 Volts P−Channel TSOP−6 Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, ...
... 12 nC @ 4.5 V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 10 V FET Feature - Power Dissipation (Max) 1.6W (Ta)...
...Power Electronics TO-236-3 Transistor High Speed Switching Linear Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 11...
...Power Electronics Module Single P-Channel WDFN8 -100 V 120 m -13 A Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 15A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 1...
...Power Electronics P-Channel -5.2 A -30 V Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V ...
... nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 24 V FET Feature - Power Dissipation (Max) 840mW (Ta)...
... 20 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 16 V FET Feature - Power Dissipation (Max) 8.3W (Ta)...
...Power Electronics SC-75 SMD High Performance Voltage Gate Charge RDS Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2...
...Power Electronics N-Channel Enhancement Mode SC-75 600V 4.3A 17.3mΩ RDS FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 154mA (Tj...
... nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1255 pF @ 15 V FET Feature - Power Dissipation (Max)...
... Power Electronics The FDS2582 is an N-Channel Enhancement Mode MOSFET designed for low voltage, high current switching applications. It has an excellent RDS(on) rating of only 5 mΩ, providing superior effic...
...Power Electronics N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Dr...
...Power Electronics Transistor for High-Speed Switching Applications Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Ma...
...Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50 V Current - Continuous Drain (Id) @ 25°C 220...
...Power Electronics TO-236-3 N-Channel Enhancement Mode Field Effect Transistor High Performance FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50 V Current - Continuous Drai...
...Power Electronics TO-236-3 Package N-Channel Enhancement Mode Field Effect Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ ...
...Power Electronics – High Performance Switching Low On-Resistance and High Temperature Operation Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On,...
FDPF18N20FT MOSFET Power Electronics High Performance Switching Low On-Resistance and High Temperature Operation FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250 V Current...