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IRFS3306TRLPBF MOSFET Power Electronics Transistor with Improved Performance and Reliability IRFS3306TRLPBF MOSFET Product Description: This MOSFET is a N-Channel enhancement mode, high-speed, power MOSFET devi...
IRFBG30PBF MOSFET High Performance Power Electronics for Optimal Efficiency Description: The IRFBG30PBF is a high-performance N-Channel enhancement-mode silicon gate power field-effect transistor designed for h...
...-Source Breakdown Voltage (Vds): 100V • Gate-Source Voltage (Vgs): +/- 20V • Continuous Drain Current (Id): 34A • Power Dissipation (Pd): 143W • Rds(on): 0.028 Ohm • Threshold Voltage (Vth): 4V • Operating T...
SI4401DDY-T1-GE3 MOSFET Power Electronics High Performance Low Voltage Switching Solution This MOSFET is a high-performance, low-voltage, low-power transistor designed for use in a wide range of applications. I...
IRL8113PBF MOSFET Power Electronics High Performance Low Voltage Low On Resistance Switch IRL8113PBF is a MOSFET designed for efficient and reliable power switching applications. It is optimized for low on-resi...
...resistance, low gate charge, and high power dissipation. It has a drain source voltage of 100 V and a drain current of 8 A. The package type is a TO-220-3. Parameters: • Drain Source Voltage: 100 V • ......
... drain-source voltage and +/-20V gate-source voltage. It has an on-resistance of 0.14 Ohms and is ideal for applications such as motor control, power switching and voltage regulation. Parameters: - Peak Drai...
...Power Electronics for Maximum Efficiency and Reliability Features: • Low On-Resistance • Low Gate Charge • Low Threshold • Ease of Paralleling • Avalanche Rated Package: TO-220AB Absolute Maximum Ratings: • ...
...Power Electronics Applications Features: • Low Gate Charge Qg • Low Total Gate Charge Qgd • Fast Switching • Excellent On-State R DS(on) • High Avalanche Energy • Easy Paralleling Applications: • Choke-Free ...
...Power Electronics High Performance Low Voltage Single N Channel Logic Level Gate FET IRLML5103TRPBF MOSFET N-Channel 20V 4.2A (Tc) 25W (Tc) Surface Mount PowerPAK 1212-8 Product Description: This IRLML5103TR...
IRLML2244TRPBF MOSFET Power Electronics High Performance High Efficiency Switching Description: The IRLML2244TRPBF is a P-channel enhancement mode MOSFET. It is designed to deliver high performance in power man...
SI7430DP-T1-GE3 MOSFET Power Electronics High Performance Low Voltage Small Size Solution Features: • Enhanced channel temperature and power rating for improved ruggedness • Low on-resistance and fast switching...
...Power Electronics Low On Resistance High Efficiency and Reliable Performance The IRLML2502TRPBF is a high performance, low voltage (2.5V), logic level, N-channel MOSFET. It has increased performance and a lo...
...Power Electronics High Performance Durable Design for Your Application Product Type: MOSFET Part Number: IRF540NSTRLPBF Package Type: TO-220 Configuration: N-Channel Voltage Rating (VDSS): 100 V Continuous D...
...Power Electronics Applications Product Features: -60V Drain-Source Breakdown Voltage -Typical Output Capacitance: 790pF -Typical Gate Charge: 34nC -RDS(on) = 0.19 Ohm -Maximum Continuous Drain Current: 35A -...
IRFB42N20DPBF MOSFET Power Electronics High Performance High Reliability Switching Solutions Description: The IRFB42N20DPBF is an advanced Power MOSFET featuring low on-resistance, fast switching speed, and hig...
IRFS7734TRLPBF High-Performance MOSFET Power Electronics for Enhanced Efficiency and Reliability IRFS7734TRLPBF MOSFET Transistor Product Description: The IRFS7734TRLPBF is a P-channel enhancement mode power MO...
IRFP4668PBF MOSFET Power Electronics High Current High Voltage High Speed Devices Description: The IRFP4668PBF is a high performance N-channel Power MOSFET. This device is designed to be used as a switch in ind...
...Power Electronics Applications Features: • Low On-Resistance • Low Gate Threshold Voltage • High Forward Transfer Admittance • Low Input Capacitance • Low Output Capacitance • High Speed Switching • Avalanch...
... MOSFET with a drain-source voltage of 55V and a drain-source on-state resistance of 0.9ohm. The maximum power dissipation is 9W. This MOSFET has a drain-source breakdown voltage of 55V and a gate-source bre...