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...state resistance. It is suitable for applications such as high-speed switching, motor control, switching power supplies, and other power management applications. Product Features: • Maximum Drain Source Volt...
...device with a low gate charge for high efficiency, low power loss and fast switching. Specifications: - Drain-Source Voltage: 100V - Drain Current: 34A - Gate Threshold Voltage: 4V - RDS(on): 0.042 Ohm - Inp...
... device is a high-performance transistor that can handle up to 100V and has a maximum current rating of 22A. It is suitable for use in a variety of applications, including power conversion, motor control, an...
...-Source Voltage: 500V • Continuous Drain Current: 7.5A • Drain-Source On-Resistance: 0.028Ω • Gate-Source Voltage: ±20V • Power Dissipation: 16W • Operating Temperature Range: -55°C to +150°C • Storage Tempe...
IRF7319TRPBF MOSFET High-Power High-Speed Switching for Power Electronics Applications Description: This MOSFET is a N-channel HEXFET Power MOSFET with low gate charge and low on-resistance. Features: Dynami...
...Power Electronics High Performance Low Loss High Current Switching. Description: The IRGB4062DPBF is a N-channel MOSFET, housed in a TO-252 package. It is designed for use in a variety of applications, inclu...
SPW20N60C3 MOSFET Power Electronics High-Performance Low Loss Switching for High Power Applications Package Type: TO-220 Maximum Drain Source Voltage (Vds): 600V Maximum Gate Source Voltage (Vgs): ±20V Drain Cu...
... RDS(on)@25°C: 0.032Ω • Gate-Source Voltage: ±20V • Power Dissipation: 600W • Operating Temperature Range: -55°C to 150°C • Mounting Type: Through Hole • Package / Case: TO-247-3 Why buy from us >>> Fast / ....
..., low on-resistance and high power handling capability. This device is ideal for switching applications, including motor control and power conversion. Product Specifications: • Drain-Source Voltage (Vdss): 1...
...MOSFET Power Electronics High Efficiency and Reliability for Your Power Applications 1. Product Name: IRFP064VPBF MOSFET 2. Package Type: TO-220 3. Maximum Drain Source Voltage: 500V 4. Continuous Drain Curr...
... Source Voltage (VDS): 100V - RDS(on): 0.045Ω - Gate-Source Voltage (VGS): 20V - Drain Current (ID): 33A - Power Dissipation (PD):...
...Power Electronics Applications IRFP2907PBF MOSFET This MOSFET is a high power, low-voltage N-Channel MOSFET with a drain-source voltage of 100V and a drain current of 19A. It has a fast switching speed and a...
...Power Low On Resistance High Efficiency Power Electronics Solution This MOSFET is a high performance, low gate charge, and low on-resistance N-Channel MOSFET. It is optimized for low voltage applications and...
...power efficiency. This MOSFET features an excellent on-resistance of 1.5 Ohms and a maximum drain current of 16A. It also features a low input capacitance of 28pF and a ......
... threshold voltage of 4V. It has a maximum drain current of 61A and a maximum drain source resistance of 0.0084 Ohms. It offers a maximum power dissipation of 225W and a maximum junction temperature of 175°C...
... performance, low leakage current, low gate charge, and low on-resistance. The SI2304DDS-T1-GE3 is suitable for use in high power switching, power management, and...
... MOSFET is designed for use in a wide range of applications such as DC/DC converters, AC/DC power supplies and actuators. It features a low on-resistance of 0.4 Ω and a very low gate charge of 2.6 nC. Produc...
...Continuous Drain Current (ID): 5.5A 4. On-State Resistance (RDS(on)): 0.84Ω 5. Power Dissipation (PD): 9.2W 6. Operating Temperature: -55°C to 150°C 7. Package: TO-220 8. Transistor Polarity: N-Channel 9. Mo...
...Power Electronics High-Performance High-Efficiency Low-Power Switching Solutions Product Listing: IRLL014NTRPBF – N-Channel MOSFET • Drain-Source Voltage: 65V • Gate-Source Voltage: ±20V • Drain Current: 14A...
... High-Performance Power Electronics Solution for Automation Control IPW65R110CFD N-Channel Power MOSFET Product Description: The IPW65R110CFD N-Channel Power MOSFET is a high-speed, low-loss device designed ...