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...Range: -55°C to 175°C Mounting: Through Hole Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong,...
...Power Electronics Features: - Low on-resistance:RDS(on) is only 450mΩ - High current capability: ID=19A - Low gate charge: Qg=7.2nC - Low input capacitance: Ciss=213pF - High power dissipation: PD=1.4W - Ope...
... design for improved switching performance - Fully qualified to AEC-Q101 Applications: - DC/DC converters - Motor control - Lighting - Power management - Portable electronics Package: SOT-23 Specifications: ...
...Power Electronics SI2347DS-T1-BE3 High Performance Power Switching Product Listing: SI2347DS-T1-BE3 - N-Channel Power MOSFET Features: - Low On-Resistance - Low Input Capacitance - Low Gate Charge - High-Spe...
...-Source Voltage: 600V • Continuous Drain Current: 8.2A • Drain-Source On-Resistance: 0.66ohm • Gate-Source Voltage: ±20V • Power Dissipation: 1.2W • Operating Temperature: -55°C...
...Power Electronics High Performance Reliable Power Switches Description: This is a N-Channel Power MOSFET designed for high-speed switching applications. It has a maximum drain-source voltage of 100 V, a maxi...
...Power High Efficiency Reliable Switching for Power Electronics Product Name: IRFP250NPBF MOSFET Description: IRFP250NPBF is a N-channel MOSFET that provides excellent switching performance and high power dis...
...making it ideal for high-efficiency power switching applications. It is designed with a maximum drain source voltage of 500V and a drain current of 4A, making it suitable for a wide range of ......
...Power Electronics IPP65R190CFD High-Performance High-Efficiency FETs for Enhanced Power Delivery We are proud to present the IPP65R190CFD MOSFET, an advanced power device with the following features: - Maxim...
...h excellent switching characteristics. It is ideal for power management and switching applications. Parameters: - Operating Voltage: 20V - Drain-Source Voltage: 20V - Gate-Source Voltage: ±20V - Continuous D...
...Power Electronics High Power Switching at Low Losses Description: The IRF730PBF is a fast switching N-channel power MOSFET designed for high-speed switching applications. It features low gate charge, low on-...
...Power MOSFET for Power Electronics Applications IRFB3306PBF Power MOSFET Parameters: VDS - 100V ID - 30A RDS(on) - 0.0088 ohm Manufacturer: International Rectifier Package Type: TO-220 Maximum Gate Threshold...
...Power Electronics High Efficiency High Current and Low On Resistance Product Description The IRFBC20PBF is a N-Channel Power MOSFET from International Rectifier. This power MOSFET features a maximum drain-so...
...Power Electronics High Power and Low On-Resistance for Maximum Efficiency Product Description: This is an N-Channel enhancement mode silicon gate power field effect transistor with an integral source-drain d...
...Power Low Voltage Power Electronics Solution Description: The IRFS7537TRLPBF is a N-Channel HEXFET Power MOSFET from International Rectifier. This device is designed to deliver the highest efficiency, reliab...
...Power Electronics High Performanc Fast Switching Low Loss Power Conversion Product Listing: Product Name: IRLB3813PBF MOSFET Transistor Description: The IRLB3813PBF is a N-Channel Power MOSFET transistor fro...
SI7115DN-T1-GE3 MOSFET Power Electronics High Power And Low On Resistance For Robust Power Applications FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuo...
...Power Electronics High Power High Efficiency Switching Features: • N-Channel Enhancement Mode • Low On-Resistance RDS(on) • Fast Switching Speed • Improved Gate Charge x RDS(on) Product • RoHS Compliant Spec...
IRLR2908TRPBF MOSFET Power Electronic Transistor High Performance Reliable and Efficient Power Solution Product Listing: IRLR2908TRPBF Power MOSFET Features: - N-Channel MOSFET - Low Gate Charge - Fast Switchin...
... Drain Current (Id): 8 A • Drain-Source On-State Resistance (Rds): 0.06 ohm • Maximum Junction Temperature (Tj): 150°C • Power Dissipation (Pd): 14 W • Mounting Type: Through Hole • Number of Elements: 1 •...